SI4618DY Vishay Siliconix, SI4618DY Datasheet - Page 9

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SI4618DY

Manufacturer Part Number
SI4618DY
Description
Dual N-Channel 30-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74450
S-70193-Rev. A, 29-Jan-07
0.001
10
10
10
10
10
10
0.01
100
0.1
10
-2
-3
-4
-6
-1
-5
1
0.00
0
Source-Drain Diode Forward Voltage
20 V
25
0.2
Reverse Current (Schottky)
V
V
SD
SD
- Source-to-Drain Voltage (V)
- Source-to-Drain Voltage (V)
25 °C
50
150 °C
0.4
75
0.6
30 V
*Limited by r
10 V
0.01
100
0.1
10
100
1
0.8
0
1 .
Safe Operating Area, Junction-to-Ambient
*V
DS(on)
GS
125
1.0
V
minimum V
DS
150
- Drain-to-Source Voltage (V)
1.2
Single Pulse
1
T
A
= 25 °C
GS
at which r
10
DS(on)
0.05
0.04
0.03
0.02
0.01
0.00
200
160
120
80
40
is specified
0
0
0
0 .
dc
1 ms
100 ms
1 s
10 s
10 ms
I
0
D
On-Resistance vs. Gate-to-Source Voltage
1
= 8 A
Single Pulse Power, Junction-to-Ambient
1
1
0
0
2
V
GS
0.01
3
- Gate-to-Source Voltage (V)
4
Time (sec)
www.DataSheet4U.com
125 °C
5
0.1
Vishay Siliconix
25 °C
6
Si4618DY
7
www.vishay.com
1
8
9
10
1
0
9

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