2SK973 Hitachi Semiconductor, 2SK973 Datasheet - Page 4

• Manufacturer Part Number: 2SK973
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

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2SK973 L , 2SK973 S
1.0
0.8
0.6
0.4
0.2
2.0
1.6
1.2
0.8
0.4
–40
0
0
0
Drain to Source Saturation Voltage
Gate to Source Voltage V
Static Drain to Source on State
Pulse Test
Resistance vs. Temperature
Case Temperature T
vs. Gate to Source Voltage
2
0
V
V
GS
40
GS
4
= 10 V
= 4 V
80
6
I
D
1 A
I
= 2 A
D
C
Pulse Test
1 A, 2 A
= 1 A
(°C)
GS
120
2 A
5 A
8
5 A
(V)
160
10
1.0
0.5
0.2
0.1
0.05
10
1.0
0.5
0.2
0.1
2
0.05
5
5
2
0.2
Pulse Test
V
Pulse Test
0.1
Forward Transfer Admittance
DS
Static Drain to Source on State
Resistance vs. Drain Current
0.5
= 10 V
Drain Current I
0.2
Drain Current I
vs. Drain Current
T
1.0
C
= 25°C
0.5
–25°C
2
1.0
D
D
(A)
75°C
5
(A)
V
2
GS
10 V
10
= 4 V
5
20