2SK973 Hitachi Semiconductor, 2SK973 Datasheet - Page 2

• Manufacturer Part Number: 2SK973
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

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Table 2 Electrical Characteristics (Ta = 25°C)
Item
———————————————————————————————————————————
Drain to source breakdown
voltage
———————————————————————————————————————————
Gate to source breakdown
voltage
———————————————————————————————————————————
Gate to source leak current
———————————————————————————————————————————
Zero gate voltage drain current
———————————————————————————————————————————
Gate to source cutoff voltage
———————————————————————————————————————————
Static drain to source on state
resistance
———————————————————————————————————————————
Forward transfer admittance
———————————————————————————————————————————
Input capacitance
————————————————————————————————
Output capacitance
————————————————————————————————
Reverse transfer capacitance
———————————————————————————————————————————
Turn-on delay time
————————————————————————————————
Rise time
————————————————————————————————
Turn-off delay time
————————————————————————————————
Fall time
———————————————————————————————————————————
Body to drain diode forward
voltage
———————————————————————————————————————————
Body to drain diode reverse
recovery time
———————————————————————————————————————————
* Pulse Test
2SK973 L , 2SK973 S
Symbol
V
V
I
I
V
R
|y
Ciss
Coss
Crss
t
t
t
t
V
t
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DF
DS(on)
fs
|
Min
60
±20
—
—
1.0
—
1.2
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.25
———————
0.40
2.0
240
115
35
4
15
80
40
1.0
70
Max
—
—
±10
100
2.0
0.35
0.50
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
I
V
V
I
I
——————————–
I
I
V
f = 1 MHz
I
R
I
I
di
D
G
D
D
D
D
D
F
F
GS
DS
DS
L
F
= 2 A, V
= 2 A, V
= 10 mA, V
= 1 mA, V
= 1 A, V
= 1 A, V
= 1 A, V
= 1 A, V
= ±100 µA, V
/dt = 50 A/µs
= 30
= 50 V, V
= 10 V, V
= ±16 V, V
GS
GS
GS
GS
DS
GS
DS
GS
GS
GS
= 0
= 0,
= 10 V *
= 10 V *
= 4 V *
= 10 V,
DS
DS
= 10 V
= 0
= 0
= 0,
= 0
= 0