2SK973 Hitachi Semiconductor, 2SK973 Datasheet - Page 3

• Manufacturer Part Number: 2SK973
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

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15
10
5
4
3
2
1
0
0
5
0
10 V
Drain to Source Voltage V
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature T
2
4 V
5 V
50
V
GS
4
= 2 V
3.5 V
2.5 V
3 V
6
100
Pulse Test
C
DS
(°C)
8
(V)
150
10
0.05
1.0
0.3
0.1
50
30
10
5
4
3
2
1
0
0
3
0.1
V
Pulse Test
Gate to Source Voltage V
DS
Drain to Source Voltage V
Typical Transfer Characteristics
Maximum Safe Operation Area
0.3
= 10 V
Ta = 25°C
1
1.0
2
–25°C
3
3
2SK973 L , 2SK973 S
10
GS
T
DS
4
C
10 s
30
= 25°C
(V)
(V)
75°C
100
5