2SK1159 Hitachi Semiconductor, 2SK1159 Datasheet - Page 6

• Manufacturer Part Number: 2SK1159
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SK1159, 2SK1160
6
5,000
2,000
1,000
500
400
300
200
100
500
200
100
50
0
0.2
di/dt = 100 A/ s, Ta = 25°C
V
Pulse Test
V
GS
DD
V
Dynamic Input Characteristics
Reverse Drain Current I
DS
Body to Drain Diode Reverse
20
0.5
= 0
= 100 V
Gate Charge Qg (nc)
V
250 V
100 V
250 V
400 V
DD
1.0
Recovery Time
= 400 V
40
2
V
GS
60
5
DR
I
D
80
= 8 A
(A)
10
100
20
20
16
12
8
4
0
10,000
1,000
500
200
100
100
50
20
10
10
5
0.2
0
V
PW = 2 s, duty < 1%
GS
Drain to Source Voltage V
= 10 V, V
0.5
Switching Characteristics
10
Drain to Source Voltage
Typical Capacitance vs.
Drain Current I
t
r
1.0
DD
t
t
f
d (off)
20
= 30 V
•
•
2
t
d (on)
Ciss
Coss
Crss
30
D
5
(A)
V
f = 1 MHz
DS
GS
40
10
= 0
(V)
20
50