2SK1159 Hitachi Semiconductor, 2SK1159 Datasheet - Page 3

• Manufacturer Part Number: 2SK1159
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

Electrical Characteristics (Ta = 25°C)
Item
Drain to source
breakdown voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage
drain current
Gate to source cutoff voltage
Static Drain to source 2SK1159 R
on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode forward
voltage
Note:
1. Pulse test
2SK1159 V
2SK1160
2SK1159 I
2SK1160
2SK1160
Symbol Min
V
I
V
|yfs|
Ciss
Coss
Crss
t
t
t
t
V
t
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DF
DS(on)
450
500
—
—
2.0
—
—
4.5
—
—
—
—
—
—
—
—
—
30
Typ
—
—
—
—
—
0.55
0.60
7.5
1150
340
55
17
55
100
45
0.9
350
Max
—
—
250
3.0
0.7
0.8
—
—
—
—
—
—
—
—
—
—
10
Unit
V
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
A
A
Test conditions
I
I
V
V
V
I
I
I
V
f = 1 MHz
I
R
I
I
di
2SK1159, 2SK1160
D
G
D
D
D
D
F
F
GS
DS
DS
DS
L
F
= 8 A, V
= 8 A, V
= 10 mA, V
= 100 A, V
= 1 mA, V
= 4 A, V
= 4 A, V
= 4 A, V
/dt = 100 A/ s
= 7.5
= 360 V, V
= 400 V, V
= 10 V, V
= 25 V, V
GS
GS
GS
DS
GS
DS
= 0
= 0,
= 10 V *
= 10 V *
= 10 V,
GS
GS
DS
GS
GS
= 10 V
DS
= 0,
= 0
= 0
= 0
= 0
= 0
1
1
3