2SK1159 Hitachi Semiconductor, 2SK1159 Datasheet - Page 5

• Manufacturer Part Number: 2SK1159
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

10
8
6
4
2
0
2.0
1.6
1.2
0.8
0.4
Drain to Source Saturation Voltage
0
–40
Gate to Source Voltage V
vs. Gate to Source Voltage
V
Pulse Test
4
GS
Static Drain to Source on State
Resistance vs. Temperature
Case Temperature T
= 10 V
0
8
40
I
D
12
I
D
= 10 A
10 A
= 2 A
5 A
Pulse Test
80
GS
16
C
(V)
(°C)
120
2, 5 A
20
160
1.0
0.5
50
20
10
5
2
1.0
0.5
0.2
0.1
0.1
10
5
2
0.5
V
Pulse Test
DS
0.2
Forward Transfer Admittance
Pulse Test
= 20 V
1.0
Static Drain to Source on State
Resistance vs. Drain Current
Drain Current I
vs. Drain Current
Drain Current I
0.5
2
2SK1159, 2SK1160
1.0
T
C
5
= 25°C
–25°C
75°C
D
2
10
D
(A)
V
(A)
GS
= 10 V
20
5
15 V
10
50
5