TC1017 Microchip Technology, TC1017 Datasheet - Page 3

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TC1017

Manufacturer Part Number
TC1017
Description
Tiny CMOS LDO
Manufacturer
Microchip Technology
Datasheet

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ELECTRICAL CHARACTERISTICS (CONTINUED)
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, V
Boldface type specifications apply for junction temperatures of – 40°C to +125°C.
Settling Time
(from Shutdown Mode)
Output Short-Circuit Current
Thermal Regulation
Thermal Shutdown Die
Temperature
Thermal Shutdown Hysteresis
Output Noise
SHDN Input High Threshold
SHDN Input Low Threshold
Note 1:
Electrical Specifications: Unless otherwise indicated, V
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SOT23
Thermal Resistance, 5L-SC-70
2003 Microchip Technology Inc.
2:
3:
4:
5:
6:
7:
Parameter
The minimum V
V
Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value at a 1V differential.
Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e. T
dissipation causes the device to initiate thermal shutdown. Please see Section 5.1, “Thermal Considerations”, for
more details
TCV
Parameters
R
is the regulator voltage setting. For example: V
OUT
=
------------------------------------------------------------------------------------- -
.
V
O UTMAX
IN
has to meet two conditions: V
V OUT
V
V
OUTMIN
I
OUT
OUTSC
Sym
T
V
V
eN
T
t
SD
S
IH
IL
Sym
SD
T
/P
T
T
T
T
JA
JA
A
A
A
A
D
10
6
Min
-40
-40
-40
-65
IN
= V
Min
45
R
IN
Typ
+ 1V, I
255
450
R
2.7V and V
= 1.8V, 2.7V, 2.8V, 3.0V.
DD
= +2.7V to +5.5V and V
L
= 100 µA, C
+125
+125
+150
Max
+85
0.04
Typ
120
160
800
32
10
IN
A
, T
(V
Units
°C/W
°C/W
R
J
L
,
°C
°C
°C
°C
+ 2.5%) + V
= 1.0 µF, SHDN > V
JA
). Exceeding the maximum allowable power
Max
15
Industrial Temperature parts
Extended Temperature parts
SS
DROPOUT
nV/ Hz
Units
= GND.
%V
%V
V/W
LMAX
mA
µs
°C
°C
IN
IN
.
IH
Conditions
at V
, T
V
C
1 µF, f = 100 Hz
V
Current
Notes 6, 7
f = 10 kHz
V
V
A
IN
IN
OUT
IN
IN
IN
= +25°C
TC1017
= 6V for t = 10 msec.
Test Conditions
= 5V, I
= 2.7V to 6.0V
= 2.7V to 6.0V
= 1 µF, C
= 0V, Average
DS21813B-page 3
L
= 60 mA,
OUT
=

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