Si8800EDB Vishay Siliconix, Si8800EDB Datasheet - Page 6

• Manufacturer Part Number: Si8800EDB
• Description: N-Channel 20 V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Si8800EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
0.01
0.01
0.1
0.1
1
1
10
10
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with maximum copper)
0.05
-4
0.02
-4
0.2
0.1
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with minimum copper)
Duty Cycle = 0.5
0.1
Duty Cycle = 0.5
0.2
Single Pulse
Single Pulse
10
10
-3
-3
10
10
-2
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
10
-1
-1
1
1
10
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
P
DM
DM
JM
JM
- T
- T
t
t
A
1
A
1
S10-1046-Rev. A, 03-May-10
= P
= P
t
t
2
2
Document Number: 66700
DM
DM
100
100
Z
Z
thJA
thJA
thJA
thJA
t
t
t
t
www.DataSheet4U.com
1
2
1
2
(t)
(t)
= 185 °C/W
= 330 °C/W
1000
1000