BAS16VV-BAS16VY NXP Semiconductors, BAS16VV-BAS16VY Datasheet - Page 6

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BAS16VV-BAS16VY

Manufacturer Part Number
BAS16VV-BAS16VY
Description
Bas16vv; Bas16vy Triple High-speed Switching Diodes
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
8. Test information
BAS16VV_BAS16VY_3
Product data sheet
Fig 5. Reverse recovery time test circuit and waveforms
Fig 6. Forward recovery voltage test circuit and waveforms
(1) I
R
V = V
S
R
Input signal: reverse pulse rise time t
Oscilloscope: rise time t
Input signal: forward pulse rise time t
S
R
= 50
R
= 50
= 1 mA
I
I
F
R
S
1 k
D.U.T.
450
I
F
r
= 0.35 ns
D.U.T.
OSCILLOSCOPE
R
i
= 50
r
r
OSCILLOSCOPE
= 0.6 ns; reverse voltage pulse duration t
= 20 ns; forward current pulse duration t
mga881
SAMPLING
R
i
= 50
Rev. 03 — 20 April 2007
I
V
R
10 %
t
r
t
10 %
r
90 %
input signal
90 %
input signal
t
p
t
p
BAS16VV; BAS16VY
p
p
= 100 ns; duty cycle
100 ns; duty cycle
Triple high-speed switching diodes
t
t
V
I
F
V FR
= 0.05
output signal
0.005
output signal
© NXP B.V. 2007. All rights reserved.
t rr
mga882
(1)
t
t
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