T436416A TM, T436416A Datasheet - Page 14

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T436416A

Manufacturer Part Number
T436416A
Description
4M X 16 SDRAM
Manufacturer
TM
Datasheet

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*note : 1. All input expect CKE & DQM can be don’t care when CS is high at the CLK high going edge.
TMemory Technology Inc. reserves the right
to change products or specifications without notice.
2. Bank active & read/write are controlled by BA0 – BA1.
3. Enable and disable auto precharge function are controlled by A
4. A
10
CH
/AP and BA control bank precharge when precharge command is asserted.
TE
BA0 BA1
0
1
0
1
BA0
A
A10
0
1
0
1
0
1
10
0
0
0
0
1
/AP BA0 BA1
0
0
1
1
Disable (End of burst)
BA1
Enable (End of burst)
Enable read/write command for bank A .
Enable read/write command for bank B .
Enable read/write command for bank C .
Enable read/write command for bank D .
0
0
1
1
X
0
1
0
1
Auto-Precharge
X
0
0
1
1
Active & Read/Write
Bank A
Bnak D
Bnak B
Bank C
All Bamks
precharge
Bank A
Bank D
Bank B
Bank C
Operation
P.14
10
/AP in read/wirte command.
Publication Date: MAY. 2003
T436416A
Revision: B

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