BUPD1520 Power Innovations Limited, BUPD1520 Datasheet - Page 3

• Manufacturer Part Number: BUPD1520
• Description: NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
• Manufacturer: Power Innovations Limited

P R O D U C T
0·01
1·0
0·1
10
1·0
t
t
t
DC Operation
p
p
p
= 100 µs
=
= 10 ms
MAXIMUM FORWARD-BIAS
1 ms
V
SAFE OPERATING AREA
CE
- Collector-Emitter Voltage - V
10
I N F O R M A T I O N
Figure 2.
100
1·0
MAXIMUM SAFE OPERATING REGIONS
10
0·01
100
FORWARD CURRENT TRANSFER RATIO
V
TYPICAL CHARACTERISTICS
CE
= 5 V
T
C
= 25°C
R3636CFB
COLLECTOR CURRENT
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
I
C
1000
0·1
- Collector Current - A
Figure 1.
vs
3
2
1
0
0
1·0
200
T
T
T
C
C
C
= 125°C
= 25°C
=
V
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
R3636CHF
CE
400
- Collector-Emitter Voltage - V
0°C
10
600
MAY 1999 - REVISED SEPTEMBER 1999
Figure 3.
800 1000 1200 1400 1600
I
V
T
B(on)
C
BE(off)
= I
= -5 V
= 25°C
BUPD1520
C
R3636CRB
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