BUPD1520 Power Innovations Limited, BUPD1520 Datasheet - Page 2

• Manufacturer Part Number: BUPD1520
• Description: NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
• Manufacturer: Power Innovations Limited

BUPD1520
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1999 - REVISED SEPTEMBER 1999
electrical characteristics at 25°C case temperature
NOTES: 2. These parameters must be measured using pulse techniques, t
thermal characteristics
resistive switching characteristics at 25°C case temperature
P R O D U C T
2
V
V
V
V
V
R
I
I
I
BE(sat)
CE(sat)
R
h
CEO
CES
EBO
CEO
CBO
EBO
t
t
t
t
FE
d
s
r
f
JA
JC
3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located
PARAMETER
PARAMETER
within 3.2 mm from the device body.
Delay time
Rise time
Storage time
Fall time
Collector-emitter
voltage
Collector-base
voltage
Emitter-base
voltage
Collector cut-off
current
Collector-emitter
cut-off current
Emitter cut-off
current
Base-emitter
saturation voltage
Collector-emitter
saturation voltage
Forward current
transfer ratio
Junction to free air thermal resistance
Junction to case thermal resistance
I N F O R M A T I O N
I
V
I
I
I
V
V
V
I
I
I
I
I
V
V
V
V
C
C
C
EB
B
B
B
B
B
CC
CE
CE
EB
CE
CE
CE
CE
= 500 mA
= 100 mA
= 100 mA
= 400 mA
=
= 100 mA
=
=
=
= 125 V
= 11 V
= 700 V
= 1500 V
= 5 V
= 5 V
= 5 V
= 5 V
100 µA
50 mA
1 mA
1 mA
PARAMETER
I
I
B(on)
B(off)
I
V
I
I
I
I
I
I
I
I
I
I
TEST CONDITIONS
TEST CONDITIONS
B
C
C
C
C
C
C
C
C
C
C
BE
= 0
= 0
= 500 mA
= 1 A
= 2 A
= 250 mA
= 500 mA
=
= 100 mA
= 250 mA
= 500 mA
= 50 mA
= 250 mA
= 0
10 mA
p
= 300 µs, duty cycle
t
Duty cycle = 2%
p
= 300 µs
(see Notes 2 and 3)
(see Notes 2 and 3)
(see Notes 2 and 3)
2%.
1500
MIN
MIN
MIN
700
11
10
10
10
7
TYP
TYP
TYP
0.3
0.7
0.1
0.6
1.0
0.2
21
25
25
18
MAX
MAX
MAX
62.5
100
100
1.0
1.1
1.2
1.2
3.0
1
2
UNIT
UNIT
°C/W
°C/W
UNIT
mA
µA
µA
µs
µs
µs
µs
V
V
V
V
V