TS128MEP6100 Transcend Information, TS128MEP6100 Datasheet - Page 5

• Manufacturer Part Number: TS128MEP6100
• Description: 128MB 90PIN PC133 CL3 SDRAM
• Manufacturer: Transcend Information

TS128MEP6100
Transcend information Inc.
Recommended operating conditions (TA = 0 to 70°C)
ABSOLUTE MAXIMUM RATINGS
DC OPERATING CONDITIONS AND CHARACTERISTICS
CAPACITANCE (VDD = 3.3V ± .0.3V, TA = 0°C~70°C)
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Mean time between failure
Note:
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
output leakage current
Note: 1. V
Input capacitance (A
Input capacitance (/RAS, /CAS, /WE)
Input capacitance (CKE0)
Input capacitance (CLK0)
Input capacitance (/CS0~ /CS3)
Input capacitance (DQM0~DQM1)
Data input/output capacitance (DQ0~DQ31)
2. V
3. Any input 0V ≤ V
4. Dout is disabled, 0V ≤ V
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device
reliability.
Parameter
IH
IL
DD
(min) = -2.0V AC .The undershoot voltage duration is ≤ 3ns.
(max) = 2.0V AC .The overshoot voltage duration is ≤ 3ns.
supply to Vss
Parameter
Parameter
0
~A
11
, BA
IN
≤ V
0
~ BA
DDQ.
Symbol
OUT
V
V
V
V
I
I
OH
oL
1
OL
IL
IH
IL
)
≤ V
DDQ.
Symbol
Min
-0.3
2.0
2.4
-10
-10
-
V
V
DD
IN
MTBF
T
Symbol
, V
P
, V
STG
C
D
C
C
C
C
C
C
OUT1
5
OUT
DDQ
IN1
IN2
IN3
IN4
IN5
IN6
Typ
3.0
0
-
-
-
-
Min
-1.0 to +4.6
-1.0 to +4.6
-55 to +125
V
-
-
-
-
-
-
-
SO-DIMM With 16M X 16 3.3VOLT
128MB 90PIN PC133 CL3 SDRAM
DD
Value
Max
0.8
0.4
10
10
50
-
+0.3
4
Max
Unit
40
40
40
14
10
10
14
uA
uA
V
V
V
V
Years
Unit
IOH=-2mA
IOL=2mA
°C
W
V
V
Note
Unit
1
2
3
pF
pF
pF
pF
pF
pF
pF
-