TS128MEP6100 Transcend Information, TS128MEP6100 Datasheet

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TS128MEP6100

Manufacturer Part Number
TS128MEP6100
Description
128MB 90PIN PC133 CL3 SDRAM
Manufacturer
Transcend Information
Datasheet
Description
Dynamic
TS128MEP6100 consists of 4 pieces of CMOS 16Mx16bits
Synchronous DRAMs in TSOP-II 400mil packages on a 90-pin
printed circuit board. The TS128MEP6100 is a one Line Memory
Module and is intended for mounting into 90-pin edge connector
sockets.
the use of system clock. I/O transactions are possible on every
clock cycle. Range of operation frequencies, programmable
latencies allow the same device to be useful for a variety of high
bandwidth, high performance memory system applications.
Features
TS128MEP6100
Transcend information Inc.
Performance Range: PC133.
Burst Mode Operation.
Auto and Self Refresh.
LVTTL compatible inputs and outputs.
Single 3.3V + 0.3V power supply.
MRS cycle with address key programs.
Latency (Access from column address)
Burst Length (1,2,4,8 & Full Page)
Data Scramble (Sequential & Interleave)
All inputs are sampled at the positive going edge
of the system clock.
The TS128MEP6100 is a 32M bit x 32 Synchronous
Synchronous design allows precise cycle control with
RAM
high-density
memory
modules.
The
1
Placement
SO-DIMM With 16M X 16 3.3VOLT
128MB 90PIN PC133 CL3 SDRAM
PCB: 09-1730

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TS128MEP6100 Summary of contents

Page 1

... RAM high-density TS128MEP6100 consists of 4 pieces of CMOS 16Mx16bits Synchronous DRAMs in TSOP-II 400mil packages on a 90-pin printed circuit board. The TS128MEP6100 is a one Line Memory Module and is intended for mounting into 90-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock ...

Page 2

... TS128MEP6100 Dimensions Side Millimeters A 80.00 ± 0.200 B 32 ± 0.200 C 1.00 ± 0.100 D 33.70±0.100 Transcend information Inc. Pin Identification Inches 3150 ± 0.008 1.260± 0.008 0.040 ± 0.004 1326.78±0.004 2 128MB 90PIN PC133 CL3 SDRAM SO-DIMM With 16M X 16 3.3VOLT ...

Page 3

... TS128MEP6100 Pinouts Pin Transcend information Inc. Pin Pin Pin Pin Name No Name No Vss SA1 SA0 Vss 55 A11 08 Vcc 57 BA0 10 DQ0 DQ1 DQ2 DQ3 ...

Page 4

... TS128MEP6100 TS128MEP6100- Block Diagram A0~A12 BA0~BA1 DQ0~DQ15 /RAS /CAS /WE DQM0 CKE CLK DQ16~DQ31 DQM1 This technical information is based on industry standard data and tests believed to be reliable. However, Transcend makes no warranties, either expressed or implied its accuracy and assume no liability in connection with the use of this product. Transcend reserves the right to make changes in specifications at any time without prior notice ...

Page 5

... TS128MEP6100 ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on V supply to Vss DD Storage temperature Power dissipation Mean time between failure Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability ...

Page 6

... TS128MEP6100 DC CHARACTERISTICS (Recommended operating condition unless otherwise noted 70°C) Parameter Symbol Operating Current I CC1 (One Bank Active) I CC2 Precharge Standby Current I CC2 in power-down mode I CC2 Precharge Standby Current in non power-down mode I CC2 I CC3 Active Standby Current I CC3 in power-down mode ...

Page 7

... TS128MEP6100 AC Characteristics ( 65°C, VDD = 3.3V ± 0.3V, Vss= 0V) Parameter System clock cycle time CK high pulse width CK low pulse width Access time from CK Data-out hold time CK to Data-out low impedance CK to Data-out high impedance Input setup time CKE setup time for power down exit ...

Page 8

... TS128MEP6100 SIMPLIFIED TRUTH TABLE COMMAND Register Mode Register Set Auto Refresh Entry Refresh Self Refresh Exit Bank Active & Row Addr. Auto Precharge Disable Read & Column Address Auto Precharge Enable Auto Precharge Disable Write & Column Address Auto Precharge Enable ...

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