STGIPN3H60 STMicroelectronics, STGIPN3H60 Datasheet - Page 8

• Manufacturer Part Number: STGIPN3H60
• Manufacturer: STMicroelectronics

Electrical characteristics
3
Table 7.
1. Applied between
Note:
8/20
Inductive load switching time and energy
Symbol
V
t
t
CE(sat)
I
c(on)
c(off)
E
E
CES
V
t
t
t
on
off
rr
on
off
F
Collector-emitter
saturation voltage
Collector-cut off current
(V
Diode forward voltage
Turn-on time
Crossover time (on)
Turn-off time
Crossover time (off)
Reverse recovery time
Turn-on switching losses
Turn-off switching losses
IN
Electrical characteristics
T
Inverter part
t
the switching time of IGBT itself under the internally given gate driving condition.
ON
J
(1)
= 25 °C unless otherwise specified.
= 0 “logic state”)
and t
Parameter
HIN
i
, LIN
OFF
i
and GND for i = U, V, W (LIN inputs are active-low).
include the propagation delay time of the internal drive. t
V
I
V
I
V
V
V
V
V
I
(see
C
C
C
CC
CC
CE
IN
DD
CC
IN
= 1 A
= 1 A, T
= 1 A
(1)
(1)
= 600 V, V
= V
= V
= 300 V,
= V
Figure
= 0 - 5 V,
= 0 “logic state”, I
boot
boot
boot
Test conditions
Doc ID 018957 Rev 1
J
= 125 °C
4)
= 15 V, V
= 15 V, V
= 15 V,
CC
= V
IN
IN
Boot
(1)
(1)
C
= 0 - 5 V,
= 0 - 5 V,
= 1 A
= 15 V
Min.
-
-
-
-
-
-
-
-
-
-
-
Typ.
2.15
1.65
Value
275
890
125
90
50
18
13
C(ON)
and t
Max.
250
2.6
1.7
STGIPN3H60
C(OFF)
Unit
µA
ns
µJ
V
V
are