SST25VF080-33-4C-QA Silicon Storage Technology, Inc., SST25VF080-33-4C-QA Datasheet - Page 10

• Manufacturer Part Number: SST25VF080-33-4C-QA
• Description: Voltage = 2.7 to 3.6 ;; Density = 8Mb ;; Organization = 1Mb X 8 ;; Speed = 0 - 20 MHZ ;; Temp. = Commercial ;; Package = Qfn/wson
• Manufacturer: Silicon Storage Technology, Inc.

Advance Information
Byte-Program
The Byte-Program instruction programs the bits in the
selected byte to the desired data. The selected byte must
be in the erased state (FFH) when initiating a Program
operation. A Byte-Program instruction applied to a pro-
tected memory area will be ignored.
Prior to any Write operation, the Write-Enable (WREN)
instruction must be executed. CE# must remain active low
for the duration of the Byte-Program instruction. The Byte-
©2003 Silicon Storage Technology, Inc.
FIGURE 5: B
YTE
-P
ROGRAM
SCK
CE#
SO
SI
MODE 3
MODE 0
S
EQUENCE
MSB
0 1 2 3 4 5 6 7 8
02
HIGH IMPEDANCE
MSB
10
ADD.
Program instruction is initiated by executing an 8-bit com-
mand, 02H, followed by address bits [A
address, the data is input in order from MSB (bit 7) to LSB
(bit 0). CE# must be driven high before the instruction is
executed. The user may poll the Busy bit in the software
status register or wait T
self-timed Byte-Program operation. See Figure 5 for the
Byte-Program sequence.
15 16
ADD.
23 24
ADD.
31 32
MSB
D
BP
1250 F05.0
8 Mbit SPI Serial Flash
IN
LSB
for the completion of the internal
39
23
SST25VF080
S71250-00-000
-A
0
]. Following the
10/03