CR12AM Mitsubishi Electronics America, Inc., CR12AM Datasheet - Page 5

• Manufacturer Part Number: CR12AM
• Description: Mitsubishi Semiconductor (thyristor) Medium Power Use Non-insulated Type, Glass Passivation Type
• Manufacturer: Mitsubishi Electronics America, Inc.

RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
10.0
160
140
120
100
160
140
120
100
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
ALLOWABLE AMBIENT TEMPERATURE VS.
80
60
40
20
80
60
40
20
0
0
0
RATE OF RISE OF OFF-STATE VOLTAGE
10
0
0
TURN-ON TIME VS. GATE CURRENT
AVERAGE ON-STATE CURRENT (A)
1
AVERAGE ON-STATE CURRENT
10
2 3
0.2
BREAKOVER VOLTAGE VS.
20
(RECTANGULAR WAVE)
= 30°
GATE CURRENT (mA)
0.4
5 7 10
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
30 40
60°
0.6
#
2
2 3 5 7 10
0.8
50
90°
120°
60
1.0
DC
T
V
R
TYPICAL
EXAMPLE
I
70
GT
# 11.2mA
T
TYPICAL
EXAMPLE
I
3
a
D
360°
L
1.2 1.4
GT
# 10.1mA
j
= 25°C
270°
= 12
= 125°C
2 3 5 7 10
= 100V
(25°C)
80
(25°C)
#
180°
90
100
1.6
4
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR THYRISTOR
200
180
160
140
120
100
200
180
160
140
120
100
10
10
10
10
REPETITIVE PEAK REVERSE VOLTAGE VS.
80
60
40
20
80
60
40
20
0
7
5
3
2
7
5
3
2
7
5
3
2
0
–40
–40
–40
3
2
1
0
TYPICAL EXAMPLE
–20
–20
–20
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
HOLDING CURRENT VS.
0
0 20 40
0
20 40
20 40
TYPICAL EXAMPLE
TYPICAL EXAMPLE
60
60
60
80
80 100 120 140
80
MEDIUM POWER USE
I
100
GT
100
# 1 10.6mA
# 2 11.6mA
(25°C)
120
120
# 2
# 1
140
140
CR12AM
160
160
160
Feb.1999