CR12AM Mitsubishi Electronics America, Inc., CR12AM Datasheet - Page 2

• Manufacturer Part Number: CR12AM
• Description: Mitsubishi Semiconductor (thyristor) Medium Power Use Non-insulated Type, Glass Passivation Type
• Manufacturer: Mitsubishi Electronics America, Inc.

ELECTRICAL CHARACTERISTICS
PERFORMANCE CURVES
I
I
V
V
V
I
I
R
1. The contact thermal resistance R
RRM
DRM
GT
H
TM
GT
GD
th (j-c)
Symbol
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
10
10
10
10
MAXIMUM ON-STATE CHARACTERISTICS
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
0
0.6
T
c
1.0
Parameter
= 25°C
ON-STATE VOLTAGE (V)
1.4
th (c-f)
1.8
is 1.0 C/W with greased.
2.2
2.6
T
T
T
T
T
T
T
Junction to case
3.0
j
j
c
j
j
j
j
=125 C, V
=125 C, V
=25 C, V
=125 C, V
=25 C, V
=25 C, V
=25 C, I
3.4
TM
D
D
D
RRM
DRM
=6V, I
D
=6V, I
=12V
3.8
=40A,
=1/2V
applied
applied
1
T
T
=1A
=1A
DRM
Test conditions
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR THYRISTOR
400
360
320
280
240
200
160
120
80
40
0
10
RATED SURGE ON-STATE CURRENT
0
2 3
CONDUCTION TIME
(CYCLES AT 60Hz)
4
5 7 10
Min.
1
0.2
—
—
—
—
—
—
—
MEDIUM POWER USE
2 3
Limits
Typ.
—
—
—
—
—
—
15
—
4
5 7 10
CR12AM
Max.
2.0
2.0
1.6
1.5
1.2
—
30
—
2
Feb.1999
Unit
mA
mA
mA
mA
C/W
V
V
V