CR12AM Mitsubishi Electronics America, Inc., CR12AM Datasheet - Page 3

• Manufacturer Part Number: CR12AM
• Description: Mitsubishi Semiconductor (thyristor) Medium Power Use Non-insulated Type, Glass Passivation Type
• Manufacturer: Mitsubishi Electronics America, Inc.

10
10
10
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
MAXIMUM AVERAGE POWER DISSIPATION
64
56
48
40
32
24
16
–1
3
2
7
5
3
2
7
5
3
2
7
5
0
8
0
–40 –20
1
0
10
0
AVERAGE ON-STATE CURRENT (A)
1
RESISTIVE,
INDUCTIVE
LOADS
V
JUNCTION TEMPERATURE (°C)
360°
2 3
GATE TRIGGER VOLTAGE VS.
(SINGLE-PHASE HALF WAVE)
GT
4
V
V
JUNCTION TEMPERATURE
GATE CHARACTERISTICS
FGM
GD
= 1.5V
I
= 30°
GT
GATE CURRENT (mA)
5 7 10
0
8
= 0.2V
DISTRIBUTION
= 6V
= 30mA
20
12
2
60°
2 3 5 7 10
TYPICAL EXAMPLE
40
16
P
G(AV)
= 0.5W
90°
60
20
120°
3
P
80
24
180°
GM
2 3 5 7 10
= 5W
100
28
I
= 2A
FGM
120
32
4
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR THYRISTOR
10
10
160
140
120
100
10
10
10
10
10
10
80
60
40
20
–1
–2
10
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
–40
3
2
1
0
1
0
ALLOWABLE CASE TEMPERATURE VS.
0
–4
AVERAGE ON-STATE CURRENT (A)
TYPICAL EXAMPLE
MAXIMUM TRANSIENT THERMAL
–20
IMPEDANCE CHARACTERISTICS
AVERAGE ON-STATE CURRENT
JUNCTION TEMPERATURE (°C)
2 3
GATE TRIGGER CURRENT VS.
(SINGLE-PHASE HALF WAVE)
2
JUNCTION TEMPERATURE
= 30°
0 20 40
(JUNCTION TO CASE)
5 710
4
60°
RESISTIVE,
INDUCTIVE
LOADS
–3
6
TIME (s)
2 3 5 710
90°
60
8
80 100 120 140
120°
MEDIUM POWER USE
10
180°
–2
360°
12
2 3 5 710
14
CR12AM
160
16
–1
Feb.1999