HY29LV160 Hynix Semiconductor, HY29LV160 Datasheet - Page 35

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HY29LV160

Manufacturer Part Number
HY29LV160
Description
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
Manufacturer
Hynix Semiconductor
Datasheet

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AC CHARACTERISTICS
Notes:
1. The system may use CE# or OE# to toggle DQ[2] and DQ[6]. DQ[2] toggles only when read at an address within an
In-System Sector Protect and Unprotect, Temporary Sector Unprotect
Notes:
1. Not 100% tested.
Rev. 1.2/May 01
DQ[6]
DQ[2]
J
RESET#
W E #
E
erase-suspended sector.
RY/BY#
P
D
a
E
0 or 3V
W E #
a r
C E #
C
m
V
ID
t e
Enter Automatic
t
t
t
t
S
t
r e
V
P
U
t
V
R
R
VIDR
R
N
D I
d t
S
O
P
S
P
R
T
R
T
Erase
R
R
n I
n I
a
T
V
e
n
E
E
D I
S -
S -
d
m
S
S
T
s y
s y
p
U
E
E
a r
o
n
T
T
e t
e t
t
a r
n
p
#
#
R S P
t i s
o r
m
m
Figure 24. Temporary Sector Unprotect Timings
y r
S
S
e t
o i
e
e
S
S
S
u t
u t
n
t c
e
e
Erase
e
t c
t c
p
p
T
t c
Figure 23. DQ[2] and DQ[6] Operation
m i
r o
r o
T
T
r o
m i
m i
e
P
U
U
e
e
f
o r
n
Suspend
r o
n
D
p
Erase
f
f
p
e t
r o
r o
o r
e
o r
T
s
t c
e t
e
c
n I
e t
m
i r
T
t c
Suspend
S -
t c
p
m i
Erase
t p
R e a d
o
T
s y
e
o i
a r
m i
e t
n
y r
e
m
S
Enter Erase
S
e
Suspend
Program
e
t c
t c
r o
r o
U
P
n
p
o r
o r
e t
e t
t c
t c
Suspend
Program
Erase
1
M
M
M
M
M
x a
x a
n i
n i
n i
Suspend
-
Erase
R e a d
7
0
R e s u m e
S
Erase
p
-
t
VIDR
e
8
e
0
d
5
1
1
0
4
5
1
Erase
O
5
0
0
-
t p
9
0
o i
HY29LV160
n
-
0 or 3V
1
Complete
2
Erase
U
m
s µ
s µ
s µ
s n
n
s
t i
35

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