HY29LV160 Hynix Semiconductor, HY29LV160 Datasheet - Page 30

• Manufacturer Part Number: HY29LV160
• Description: 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
• Manufacturer: Hynix Semiconductor

HY29LV160
AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)
Note: Refer to the Program/Erase Operations table for t
30
J
from word to
from byte to
E
word mode
byte mode
P
D
switching
switching
a
E
a r
BYTE#
BYTE#
C
m
t e
t
t
t
t
S
r e
F
F
E
E
B Y T E #
H
L
L
L
d t
Q
Q
DQ[15]/A-1
DQ[15]/A-1
F
F
L
H
Z
V
W E #
C E #
DQ[14:0]
DQ[14:0]
B
B
BYTE#
BYTE#
C
C
Y
Y
E
E
O E #
CE#
T
T
#
#
E
E
o t
o t
#
#
B
B
S
S
Y
Y
w
w
Figure 18. BYTE# Timings for Write Operations
Figure 17. BYTE# Timings for Read Operations
T
T
c t i
c t i
E
E
h
h
#
#
n i
n i
S
S
g
g
w
w
L
H
c t i
c t i
t
t
o
E L F H
g i
E L F L
w
h
h
h
D
n i
n i
o t
e
o t
g
g
s
c
O
O
L
H
i r
o
g i
u
u
w
t p
p t
p t
h
t u
o i
t u
n
H
A
t
AS
S E T
g i
i t c
h
and t
e v
Z -
t
(t
Address Input A-1
F L Q Z
A S
AH
)
Data Output DQ[7:0]
Output DQ[15]
specifications.
Data Output DQ[14:0]
t
F H Q V
Falling edge of the last WE# signal
M
M
M
M
t
H O L D
a
a
a
n i
x
x
x
-
(t
2
7
7
A H
5
0
Address Input A-1
0
Data Output DQ[7:0]
Data Output DQ[14:0]
)
S
Data Output DQ[15]
p
-
2
8
e
8
5
0
e
0
d
5
5
O
-
3
9
t p
9
0
0
0
o i
n
Rev. 1.2/May 01
-
1
3
2
1
0
0
2
U
s n
s n
s n
s n
n
t i