TEA1202 Philips Semiconductors, TEA1202 Datasheet - Page 12

• Manufacturer Part Number: TEA1202
• Description: Battery power unit
• Manufacturer: Philips Semiconductors

Philips Semiconductors
Notes
1. The undervoltage lockout level shows wide specification limits since it decreases at increasing temperature. When
2. When V
3. The quiescent current is specified as the input current in the upconversion configuration at V
4. The current limit is defined by resistor R10. This resistor must be 1% accurate.
5. The specified efficiency is valid when using an output capacitor having an ESR of 0.1
6. The specified start-up time is the time between the connection of a 1.20 V input voltage source and the moment the
7. V
8. Specifications have been verified in the PFM mode.
9. The dropout voltage is defined as the voltage between the input and the output of the LDO when the output voltage
10. Measured with a sine wave at f
2000 Jun 08
General characteristics
V
I
T
T
q
SYMBOL
amb
max
ref
Battery power unit
the temperature increases, the minimum supply voltage of the digital control part of the IC decreases and therefore
the correct operation of this function is guaranteed over the whole temperature range. The undervoltage lockout level
is measured at pin UPOUT/DNIN.
conducting (duty factor is 100%), resulting in V
V
with an ESR of 0.05
output reaches 3.30 V. The output capacitance equals 100 F, the inductance equals 6.8 H and no load is present.
of the device will increase.
has dropped 100 mV below its nominal value. The dropout voltage is measured while the LDO input voltage is
decreasing and at maximum current.
O
4
is the voltage at pin UPOUT/DNIN. If the applied HIGH-level voltage is less than V
= 3.30 V, using L1 = 6.8 H, R1 = 150 k and R2 = 91 k .
I
is lower than the target output voltage but higher than 2.2 V, the P-type power MOSFET will remain
reference voltage
quiescent current at
pin UPOUT/DNIN
ambient temperature
internal temperature for cut-off
PARAMETER
and a sufficient saturation current level.
i
= 100 Hz to 1 MHz, V
all blocks operating
O
following V
CONDITIONS
i
12
= 100 mV (RMS) and I
I
.
1.165
150
20
MIN.
LDO
= 10 mA.
4
1.190
270
+25
160
TYP.
and an inductor of 6.8 H
1 V, the quiescent current
I
Objective specification
= 1.20 V and
TEA1202TS
1.215
+80
170
MAX.
V
C
C
A
UNIT