TEA1202 Philips Semiconductors, TEA1202 Datasheet - Page 10

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TEA1202

Manufacturer Part Number
TEA1202
Description
Battery power unit
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
CHARACTERISTICS
T
otherwise specified.
2000 Jun 08
DC/DC converter
U
V
V
V
V
D
V
V
R
C
I
I
I
I
P
R
R
E
T
f
f
t
amb
q(DCDC)
shdwn
lim(max)
LX(max)
sw
i(sync)
start
SYMBOL
V
I
IMING
I(up)
O(up)
I(start)
O(uvlo)
I(dwn)
O(dwn)
OWER
FFICIENCY
PCONVERSION
OWNCONVERSION
EGULATION
URRENT LEVELS
DSon(N)
DSon(P)
Battery power unit
lim
O(wdw)
= 20 to +80 C; all voltages are measured with respect to ground; positive currents flow into the IC; unless
MOSFET
input voltage
output voltage
start-up input voltage
undervoltage lockout voltage
input voltage
output voltage
output voltage window size as
a function of output voltage
quiescent current
current in shut-down mode
maximum current limit
current limit deviation
maximum continuous current
at pins LX1 and LX2
drain-to-source on-state
resistance NFET
drain-to-source on-state
resistance PFET
efficiency upconversion
switching frequency
synchronization clock input
frequency
start-up time
; pin U/D = LOW
S
; pin U/D = HIGH
PARAMETER
I
note 1
note 2
PWM mode
note 3
I
T
T
T
V
note 5
PWM mode
note 6
L
lim
amb
j
j
I
< 10 mA
upconversion
downconversion
I
I
I
= 27 C
= 27 C
= 1.2 V; V
L
L
L
set to 1.0 A; note 4
= 1 mA
= 10 mA
= 100 mA
= 80 C
CONDITIONS
10
O
up to 3.3 V;
V
V
0.93
2.0
V
1.30
1.5
0
480
6
12
12
I(start)
O(uvlo)
O(uvlo)
MIN.
0.96
2.2
2.0
110
2
5
110
125
66
81
85
600
13
10
TYP.
Objective specification
TEA1202TS
5.50
5.50
1.00
2.4
5.50
5.50
2.5
10
+12
+12
1.0
720
20
MAX.
V
V
V
V
V
V
%
A
%
%
A
m
m
%
%
%
kHz
MHz
ms
A
A
UNIT

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