Si7872DP Vishay Intertechnology, Si7872DP Datasheet - Page 7

• Manufacturer Part Number: Si7872DP
• Description: Dual N-channel 30-V (D-S) MOSFET With Schottky Diode
• Manufacturer: Vishay Intertechnology

Document Number: 72035
S-21978—Rev. A, 04-Nov-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-0.0
-0.1
-0.2
-0.3
-0.4
0.4
0.3
0.2
0.1
0.1
20
10
1
-50
0.0
-25
T
Source-Drain Diode Forward Voltage
J
= 150_C
0.3
V
SD
0
T
Threshold Voltage
- Source-to-Drain Voltage (V)
J
- Temperature (_C)
25
0.6
50
T
I
J
D
= 25_C
= 250 mA
0.9
75
100
0.01
100
0.1
1.2
10
1
0.1
125
r
DS(on)
Limited
Safe Operating Area, Junction-to-Foot
I
D(on)
Single Pulse
150
T
1.5
Limited
C
New Product
V
= 25_C
DS
- Drain-to-Source Voltage (V)
1
BV
DSS
Limited
10
0.05
0.04
0.03
0.02
0.01
0.00
100
80
60
40
20
0
10
0
- 3
I
DM
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Limited
1 ms
10 ms
100 ms
1 s
10 s
dc
2
100
10
V
GS
- 2
- Gate-to-Source Voltage (V)
Time (sec)
4
MOSFET CHANNEL−2
I
D
= 7.5 A
Vishay Siliconix
10
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6
Si7872DP
1
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