Si7872DP Vishay Intertechnology, Si7872DP Datasheet - Page 6

• Manufacturer Part Number: Si7872DP
• Description: Dual N-channel 30-V (D-S) MOSFET With Schottky Diode
• Manufacturer: Vishay Intertechnology

Si7872DP
Vishay Siliconix
www.vishay.com
6
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.040
0.032
0.024
0.016
0.008
0.000
10
30
25
20
15
10
5
0
8
6
4
2
0
0
0
0
V
I
On-Resistance vs. Drain Current
D
V
DS
5
= 7.5 A
GS
2
V
5
= 15 V
DS
= 10 thru 4 V
Output Characteristics
V
Q
- Drain-to-Source Voltage (V)
GS
10
g
I
= 4.5 V
D
Gate Charge
- Total Gate Charge (nC)
10
4
- Drain Current (A)
3 V
15
15
6
20
V
GS
20
8
= 10 V
25
10
30
25
New Product
2000
1600
1200
800
400
1.8
1.6
1.4
1.2
1.0
0.8
0.6
30
25
20
15
10
0
5
0
-50
0.0
0
On-Resistance vs. Junction Temperature
V
I
D
-25
C
0.5
GS
rss
= 7.5 A
5
= 10 V
V
GS
T
1.0
V
0
J
Transfer Characteristics
DS
- Junction Temperature (_C)
- Gate-to-Source Voltage (V)
10
- Drain-to-Source Voltage (V)
T
C
1.5
25
Capacitance
25_C
= 125_C
MOSFET CHANNEL−2
C
C
2.0
15
50
iss
oss
S-21978—Rev. A, 04-Nov-02
Document Number: 72035
2.5
75
20
-55 _C
100
3.0
25
125
3.5
150
4.0
30