Si7872DP Vishay Intertechnology, Si7872DP Datasheet - Page 4

• Manufacturer Part Number: Si7872DP
• Description: Dual N-channel 30-V (D-S) MOSFET With Schottky Diode
• Manufacturer: Vishay Intertechnology

Si7872DP
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-0.0
-0.2
-0.4
-0.6
-0.8
0.4
0.2
0.1
20
10
1
-50
0.0
-25
Source-Drain Diode Forward Voltage
0.2
T
V
J
SD
0
= 150_C
T
Threshold Voltage
- Source-to-Drain Voltage (V)
0.4
J
- Temperature (_C)
25
0.6
50
I
D
= 250 mA
75
0.8
T
100
J
0.01
= 25_C
100
0.1
10
1
1.0
0.1
125
r
DS(on)
Limited
Safe Operating Area, Junction-to-Foot
I
D(on)
Single Pulse
150
T
1.2
Limited
C
New Product
V
= 25_C
DS
- Drain-to-Source Voltage (V)
1
BV
DSS
Limited
10
0.06
0.05
0.04
0.03
0.02
0.01
0.00
100
80
60
40
20
0
10
0
I
- 3
DM
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Limited
1 ms
10 ms
100 ms
1 s
10 s
dc
2
100
10
V
GS
- 2
- Gate-to-Source Voltage (V)
Time (sec)
4
MOSFET CHANNEL−1
I
D
= 7.5 A
10
- 1
S-21978—Rev. A, 04-Nov-02
6
Document Number: 72035
1
8
10
10