GS138K GTM Corporation, GS138K Datasheet - Page 2

• Manufacturer Part Number: GS138K
• Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
• Manufacturer: GTM Corporation

Electrical Characteristics(Tj = 25
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=70 : )
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Forward On Voltage
Notes: 1. Pulse width limited by Max. junction temperature.
GS138K
2. Pulse width 300us, duty cycle 2% .
3. Surface mounted on FR4 board, t 10sec.
Parameter
Parameter
2
2
2
Symbol
R
Symbol
BV
BV
V
T
T
DS(ON)
I
C
I
C
GS(th)
Q
Q
C
V
GSS
DSS
DSS
g
Q
d(on)
d(off)
T
T
oss
DSS
iss
rss
SD
fs
gs
gd
g
r
f
/
Unless otherwise specified)
Tj
Min.
Min.
0.5
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.06
Typ.
600
0.5
0.5
12
10
56
29
32
1
8
6
-
-
-
-
-
-
-
-
Max.
Max.
±10
100
2.0
1.6
1.2
50
1
2
4
-
-
-
-
-
-
-
-
-
-
-
Unit
V/ :
Unit
mS
uA
uA
uA
nC
pF
ns
V
V
V
V
Reference to 25 : , I
V
V
V
V
V
V
V
I
V
V
V
I
V
R
R
V
V
f=1.0MHz
I
D
D
S
GS
DS
DS
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
DS
G
D
=600mA
=600mA
=200mA, V
=52
=3.3
=0, I
=V
=10V, I
= ±20V
=50V, V
=40V, V
=10V, I
=4.5V, I
=50V
=4.5V
=30V
=10V
=0V
=25V
Test Conditions
Test Conditions
ISSUED DATE :2005/10/11
REVISED DATE :
GS
D
, I
=250uA
D
D
D
D
GS
GS
=600mA
=500mA
=1mA
=400mA
GS
=0
=0
=0V
Page: 2/4
D
=1mA