GTS217E GTM [GTM CORPORATION], GTS217E Datasheet

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... N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GTS217E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Features *Low on-resistance *Capable of 2.5V gate drive *Optimal DC/DC battery application Package Dimensions Absolute Maximum Ratings ...

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... Source-Drain Diode Parameter 2 Forward On Voltage 2 Reverse Recovery Time Reverse Recovery Charge Continuous Source Current ( Body Diode Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on FR4 board, t 10sec. GTS217E Symbol Min. Typ. Max DSS 0 ...

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... Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Drain Current and Gate Voltage Fig 5. On-Resistance v.s. Gate-Source Voltage GTS217E Fig 2. Transfer Characteristics Fig 4. On-Resistance v.s. Junction Temperature 10 1 0.1 0.01 0.001 0.0001 0.00001 Fig 6. Body Diode Characteristics ISSUED DATE :2004/10/13 REVISED DATE :2006/12/25B Page: 3/4 ...

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... Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GTS217E ISSUED DATE :2004/10/13 REVISED DATE :2006/12/25B Fig 8. Single Pulse Power Rating Junction-to-Ambient v ...