GTS6923 GTM [GTM CORPORATION], GTS6923 Datasheet
GTS6923
Related parts for GTS6923
GTS6923 Summary of contents
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... P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET Description The GTS6923 provides the designer with the best combination of fast switching, ultra low on-resistance and cost-effectiveness. Features *Low on-resistance *Fast Switch Characteristic *Included Schottky Diode Package Dimensions Absolute Maximum Ratings Parameter ...
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... Parameter 2 Forward On Voltage Continuous Source Current( Body Diode Schottky Characteristics @ Tj=25 Parameter Forward Voltage Drop Max. Reverse Leakage Current Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle Surface mounted GTS6923 Symbol Min. Typ. - DSS - -0. ...
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... MOSFET Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode GTS6923 ISSUED DATE :2006/05/04 REVISED DATE : Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ...
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... Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GTS6923 Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 2. ...