RL1024P Perkin Elmer Optoelectronics, RL1024P Datasheet - Page 32

• Manufacturer Part Number: RL1024P
• Manufacturer: Perkin Elmer Optoelectronics

30
phototransistors
www.optoelectronics.perkinelmer.com
Features
• Low-cost visible and near-IR
• Available with gains from 100
• Moderately fast response times
• Available in a wide range of
• Usable with almost any visible
• Same general electrical
Typical Applications
• Computer/Business Equipment
• Industrial
• Consumer
Principle of Operation
Phototransistors are solid-state light
detectors that possess internal gain.
They can be used to provide either
an analog or digital output signal.
Datasheets available upon request
photodetection
to over 1500
packages including epoxy-coated,
transfer-molded, cast, hermetic
packages, and in chip form
or near-infrared light source such
as IREDs; neon, fluorescent,
incandescent bulbs; lasers; flame
sources; sunlight; etc.
characteristics as familiar signal
transistors
• Write-Protect Control
• Margin Controls—Printers
• LED Light Source—Light Pens
• Security Systems
• Safety Shields
• Coin Counters
• Lottery Card Readers
• Position Sensors—Joysticks
• Remote Controllers—Toys,
• Games—Laser Tag
• Camera Shutter Control
Appliances, Audio/Visual
Equipment
Absolute Maximum Ratings
Maximum Temperatures
Storage and Operating:
Continuous Power Dissipation: 50 mW
Derate above 30°C:
Maximum Current:
Lead-Soldering Temperature:
Description
Phototransistors are photodiode-amplifier combinations
integrated within a single silicon chip. These are combined to
overcome the major fault of photodiodes: unity gain. Many
applications demand a greater output signal from the photodetector
than can be generated by a photodiode alone. While the signal
from a photodiode can always be amplified through use of an
external op-amp or other circuitry, this approach is often not as
practical or as cost-effective as the use of phototransistors. The
phototransistor can be viewed as a photodiode whose output
photocurrent is fed into the base of a conventional small-signal
transistor. While not required for operation of the device as a
photodetector, a base connection is often provided, allowing the
designer the option of using base current to bias the transistor. The
typical gain of a phototransistor can range from 100 to over 1500.
Phototransistors can be used as ambient-light detectors. When
used with a controllable light source, typically an IRED, they
are often employed as the detector element for optoisolators and
transmissive or reflective optical switches.
-40°C to 100°C
-40°C to 110°C
VTT1017, VTT1115, VTT1116, and VTT1117)
-40°C to 85°C
VTT7225, VTT7122, VTT7123, and VTT7125)
-40°C to 70°C
VTT9102, and VTT9103)
100 mW
and VTT9103)
250 mW
VTT1115, VTT1116, and VTT1117)
0.71 mW/˚C
2.5 mW/˚C
and VTT9103)
3.12 mW/˚C
VTT1115, VTT1116, and VTT1117)
0.91 mW/˚C
25 mA
200 mA
VTT1115, VTT1116, and VTT1117)
260°C (1.6 mm from case, 5 sec. max.)
Table of Contents
(VTT1015, VTT1016, VTT1017,
(VTT9002, VTT9003, VTT9102,
(VTT1015, VTT1016, VTT1017,
(VTT9002, VTT9003, VTT9102,
(VTT7122, VTT7123, VTT7125)
(VTT1015, VTT1016, VTT1017,
(VTT7222, VTT7223,
(VTT9002, VTT9003,
(VTT1015, VTT1016,