RL1024P Perkin Elmer Optoelectronics, RL1024P Datasheet

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RL1024P

Manufacturer Part Number
RL1024P
Description
Manufacturer
Perkin Elmer Optoelectronics
Datasheet
sensor technologies
Advanced
for today’s breakthrough applications
Table of Contents
.
www.optoelectronics.perkinelmer.com

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RL1024P Summary of contents

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Advanced for today’s breakthrough applications Table of Contents www.optoelectronics.perkinelmer.com . ...

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PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical, communications and industrial markets. With development and manufacturing centers around the world, the company is able to leverage and align ...

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Photo Detectors Photon Counting Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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... LIDAR • Photon-Correlation Spectroscopy • Astronomical Observation • Optical Range Finding • Adaptive Optics • Ultra-Sensitive Fluorescence • Particle Sizing Datasheets available upon request 2 www.optoelectronics.perkinelmer.com Table of Contents Description PerkinElmer Optoelectronics provides photon-counting modules based on both APDs and innovative Channel Photomultipliers. ...

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Single-Photon Counting Module—SPCM SPCM-AQ4C Single-Photon Counting Array SPCM-AQR-1X Series Technical Specification Parameter Typical Supply current 0.5 Amps Power cable total resistance 0.2 Active area (diameter) @ min. Pd 175 µm Photon detection efficiency (Pd) @ 400 nm 5% 650 nm ...

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... CPM Modules: MD Series MP Series MH Series MP 96X-2, MP 97X-2 High Voltage Power Supply: CHV 30N CHV 30P Datasheets available upon request 4 www.optoelectronics.perkinelmer.com Description 7 A/W PerkinElmer Optoelectronics’ Channel Photomultiplier (CPM ultra-high sensitivity optical detector capable of replacing conventional photomultipliers (PMTs). This device uses a proprietary ...

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CPM—1/3" C 900 Series Technical Specification Spectral Response /nm 115-200 115-200 165-320 165-650 185-650 300-650 165-750 185-750 Channel Photomultipliers— 165-850 CPM Formats 1/2"and 3/4" 185-850 165-900 185-900 165-650 185-650 Useful Area: Min Window Material: MgF Electron Multiplication: Channel ...

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Power Supply CHV30N, CHV30P 6 www.optoelectronics.perkinelmer.com CPM—3/4" C 1900 Series Technical Specification Spectral Response @140 nm @200 nm @400 nm @560 nm Model /nm A/W AW A/W 115-200 C1911 6x10 5 115-320 C1921 1x10 6 165-320 C1922 1x10 ...

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CPM Module—1/3" 900 Series Technical Specification Spectral Response /nm 165-650 185-650 165-750 185-750 165-850 185-850 165-900 CPM Module Formats 1/3" , 1/2" , 3/4" 185-900 165-650 185-650 Photocathode Diameter (MP 9xx-2 types: 2 mm) Photocathode Material: Low-noise Bialkali, ...

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... Data Transmission • UV Light Meters • Fluorescent Light Detection • Laser Range Finding • Barcode Scanning • Laser Safety Scanning • Distance Measurement Datasheets available upon request 8 www.optoelectronics.perkinelmer.com Table of Contents Description PerkinElmer Optoelectronics offers a broad array of Silicon and InGaAs PIN and APDs. ...

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Indium Gallium Arsenide PIN Photodiodes, Large-Area, and Small-Area Indium Gallium Arsenide APDs • High Responsivity • Low Capacitance for High Bandwidths • Available in Various Hermetic Packages InGaAs APDs—900 nm to 1700 nm Technical Specification Photo Sens. Resp. Part Standard ...

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Silicon Avalanche Photodiodes • Hermetically Sealed Packages 10 www.optoelectronics.perkinelmer.com Si APD—Standard Types–400 nm to 1100 nm Technical Specification Photo Resp. Dark Part Standard Sens. Diam. 900 nm Curr. Number Package mm A/W Id (nA) C30817E TO-5 0 ...

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Silicon Avalanche Photodiodes • Low Cost, High Volume Si APD—NIR-Enhanced–400 nm to 1100 nm Technical Specification Photo Resp. Part Standard Sens. Diam. @1060 nm Number Package mm A/W C30954E TO-5 0.8 36 C30955E TO-5 1.5 34 C30956E TO ...

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Silicon PIN Photodiodes and Modules • Broad Range of Photosensitive Areas • Low Operating Voltage • Hermetically Sealed Packages 12 www.optoelectronics.perkinelmer.com Si PINs—Window and Lightpipe Packages, Fast Response–400 nm to 1100 nm Technical Specification Photo Resp. Part Standard Sens. ...

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Silicon PINs—UV Enhanced Si PINs—UV Enhanced, Low Noise–220 nm to 1100 nm Technical Specification Photo Part Standard Sens. Diam. Number Package mm @250 nm @900 nm UV-040BQ TO-8 1 0.12 UV-100BQ TO-8 2.5 0.12 UV-215BQ TO-8 5.4 0.12 UV-245BQ TO-8 ...

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Silicon PN Photodiodes Table Key I Short-Circuit Current SC H=100 fc, 2850 Temperature Coefficient, 2850 Open-Circuit Voltage OC H=100 fc, 2850 Temperature Coefficient, 2850 ...

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Table Key I Short-Circuit Current SC 2 940 nm, H=0.5 mW/cm (VTD205, VTD206) 2 H=5 mW/cm , 2850 K (VTD31AA, VTB Series) 100 Lux, 2850 K (VTD34, VTD205K) 100 Lux, 2856 K (VTD206K Temperature Coefficient SC SC ...

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... Automatic Headlight Dimmer • Night Light Control • Oil Burner Flame Out • Street Light Control • Absence/Presence (beam breaker) • Position Sensor Datasheets available upon request 16 www.optoelectronics.perkinelmer.com Table of Contents Description Photocells or Light-Dependent Resistors can provide a very economical and technically superior solution for many applications ...

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VT Series Specification Notes Photocells categorized into groups by resistance. All groups must be purchased together and PerkinElmer maintains the right to determine the product mix among these groups. Dimensions controlled at base of package. Photocells are tested at either ...

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A10 Series B90 Series Table Key R 10 Resistance at E=10 lux light intensity R 100 Resistance at E=100 lux light intensity R Dark Resistance after 1 sec (E= Dark Resistance after 5 sec (E=0) 05 Sensitivity ...

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D Series M Series U Series B Series Technical Specification Typical Electro-Optical Characteristics Part R10 R100 R R range typ. min. min 10/100 Number typ. B906023 4-15 1.6 0.1 0.3 0.8 B906032 5-13 2 ...

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... High temperature resistivity Typical Applications • Solar Measurement • Sterilization • Burner Controls • Industrial Controls Datasheets available upon request 20 www.optoelectronics.perkinelmer.com Table of Contents Description PerkinElmer Optoelectronics offers a range of selective sensors for ultraviolet radiation. This sensor series can be equipped with an integrated amplifier and is perfectly suited for the detection of any radiation ranging from 200 nm to 400 nm ...

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Ultraviolet Detectors General Data Max. Operating Temperature: -20 to +80˚C Max. Storage Temperature: -20 to +80˚C Spectral Response: 210-380 nm TO-5 Types Standard UV Detectors Technical Specification Radiant Pk. Response Part Sensitivity Wavelength Number Housing mA/W nm UV10SF TO-5 140 ...

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... Sensor Arrays for Spatial Temperature Measurements (Imaging Applications) • Sensors with Infrared Bandpass Filters for Gas Detection by Infrared Absorption Datasheets available upon request 22 www.optoelectronics.perkinelmer.com Table of Contents Description Thermopile detectors directly sense thermal radiation, providing the perfect device for remotely measuring temperatures without the need for any mechanical chopper ...

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Dual and Quad Element Thermopile Detectors General Data Tc of sensitivity (absolute value): 0.02%/ resistance (absolute value): 0.02%/K Max. operating temperature: -20 to 100°C Max. storage temperature: -40 to 100°C Thermistor BETA: 3964 K Option for all types: ...

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... Typical Applications • Intrusion Alarms • Motion Detection • Ceiling-Mount Person Detection • Gas Analysis • Non-Contact Infrared Measurements Datasheets available upon request 24 www.optoelectronics.perkinelmer.com Table of Contents Description Pyroelectric materials produce a charge transfer when they undergo a change in thermal energy. This effect is applied for detectors that show an output signal similar to alternating current with a change in the infrared radiation ...

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Pyroelectric Infrared Detectors General Data Max. Operating Temperature: -40 to +85°C Max. Storage Temperature: -40 to +85°C Operating Voltage: 2-12 V/47 k Load Resistor Offset Voltage: 0.2-1.5 V/47 k Load Resistor Ceiling Mount Series Dual Channel Series Dual-Element Detectors Technical ...

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... Analog Optical Isolators are used in many different types of circuits and applications. Available Related Products VTL5C Series LT3011 Series LT9900 Series Datasheets available upon request 26 www.optoelectronics.perkinelmer.com Table of Contents Description PerkinElmer Optoelectronics has been a leading manufacturer of analog optical isolators (AOI) for over twenty years and makes a ...

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Analog Optical Isolators— VTL5C Series PerkinElmer Optoelectronics’ line of AOIs consists of a light-tight package which houses a light source and one or more photoconductive cells. Through control of the input current or voltage applied to the AOI, the output ...

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... Tape Start – Tape Load – Tape End • Copiers – Paper-Presence Detection – Toner-Density Control – Paper-Carrier Detection Datasheets available upon request 28 www.optoelectronics.perkinelmer.com Table of Contents Description PerkinElmer Optoelectronics’ infrared interruptive switches are ideal for non-contact sensing applications. The emitter is generally an IR LED and the detector is either a phototransistor or a photodar- lington ...

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Infrared Interruptive Switches— Reflective Optoswitches VTR Series Transmissive Optoswitches VTL11d Series, VTL13D Series, VTL23DxA Series VTR Series Technical Specification Light Current Part Test Conditions Number mA min Volts d inches (mm VTR16D1 0.3 ...

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... Camera Shutter Control Principle of Operation Phototransistors are solid-state light detectors that possess internal gain. They can be used to provide either an analog or digital output signal. Datasheets available upon request 30 www.optoelectronics.perkinelmer.com Table of Contents Description Phototransistors are photodiode-amplifier combinations integrated within a single silicon chip. These are combined to overcome the major fault of photodiodes: unity gain ...

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NPN Phototransistors .25", small area, high speed .04", medium area, high sensitivity .05", large area, high sensitivity Table Key I Light Current C I Dark Current H=0 CEO V Collector Breakdown BR(CEO) I =100 µA, H Emitter Breakdown ...

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XL-1 Variable-Gain Multiplexers 32 www.optoelectronics.perkinelmer.com Table of Contents Description PerkinElmer Optoelectronics’ CMOS buffered multiplexers offer the ideal solution to the increasing demand for low noise amplification and multiplexing applications. They are designed to interface with a variety of ...

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High-Resolution Image Tubes Description The use of image tubes in special applications is indispensable. The camera tube is superior to solid-state image sensors in high-resolution televi- sion systems with high frame-repetition rates. The essential characteristics of the camera ...

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Features • 2500:1 dynamic range • Ultra-low image lag • Electronic exposure control • Antiblooming control • Square pixels with 100% fill factor • Extended spectral range— 250-1000 nm Typical Applications • High-Speed Document Reading • Web ...

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... Technical Specification Pixel Part Pixel Count Size Number of Number elements µm Outputs RL0512P 512 14x14 1 RL1024P 1024 14x14 1 RL2048P 2048 14x14 1 Operating Temperature: 0˚C min. to +55˚C max. Storage Temperature: -25˚C min. to +85˚C max. Lag: <1% Saturation Voltage: 600 mV Spectral Sensitivity Curve 90 ...

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Features • 2.5 mm photodiode aperture • Extremely low dark leakage current • Low power dissipation • Clock-controlled sequential readout at rates MHz • Single-supply operation with HCMOS-compatible inputs • Single shift register design ...

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L-Series Linear CMOS Spectroscopy Sensor— µm pitch, 2.5 mm aperture • 128, 256, 512 or 1024 photodiode elements with 25 µm center-to-center spacing • 128, 256, or 512 photodiode elements with 50 µm center-to-center spacing L Series ...

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Features • 363,000 picture elements (pixels 1100x330 configuration • 24 µm square pixels • 2-phase buried channel process • On-chip amplifier for low noise and high-speed readout • Dynamic range greater than 25,000:1 • On-chip ...

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Cooled CCD Sensor— 24 µm sq. pitch, 1100x330 pixel configuration Principle of Operation A major source of dark current in devices such as these originates in surface states at the Si-SiO 2 interface. A unique design and process enables the ...

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... CTE at maximum saturation exposure Typical Applications • Semiconductor Inspection • Wafer Inspection • Sorting Applications Datasheets available upon request 40 www.optoelectronics.perkinelmer.com Table of Contents Description The PT1109AAQ and PT1225AAQ Time Delay Integration (TDI) imagers combine the best features of photodiode array detection and TDI operation to offer an uncompromising solution to the increasing demands of high-speed imaging applications ...

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TDI Imagers—PT 1109AAQ and PT1225AAQ Technical Specification PT1109AAQ-711 Pixel Count* 1024 active elements Extra Stages* 8 13x13 µm Pixel Size 1 Number of Directions Integration Stages** 96 Extra Stages** 1 Number of Outputs 1 20 MHz Pixel Rate 19 kHz ...

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... Because they emit at wavelengths which provide a close match to the peak spectral response of silicon photodetectors, both GaAs and GaAIAs IREDs are often used with phototransistors. Datasheets available upon request 42 www.optoelectronics.perkinelmer.com Table of Contents Description Light Emitting Diodes (LEDs) are solid-state P-N junction devices that emit light when forward biased. An IRED is an Infrared Emitting Diode, a term specifically applied to PerkinElmer IR emitters ...

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Infrared Emitting Diodes— VTE Formats 880 nm and 940 nm GaAlAs Infrared Emitting Diodes TO-46 Flat Window Package VTE1063 TO-46 Lensed Package VTE1163 T- 1 3/4 (5 mm) Plastic Package VTE1261 VTE1281F VTE1291-2 VTE1262 VTE1281W-1 VTE1291W-1 VTE1281-1 VTE1281W-2 VTE1291W-2 VTE1281-2 ...

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Typical Applications • Laser Range Finding • LIDAR • Optical Fusing • High Speed Switching • Weapons Simulation • Laser Scanning • Fiber Optic Instrumentation • YAG Laser Simulation 44 www.optoelectronics.perkinelmer.com Description Pulsed Laser Diodes These devices range ...

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Laser Diodes Laser Diodes Multiple Quantum Well Types–905 nm–PGEW Series Technical Specification Peak Output Peak Forward Part Standard Power Current Number Package P ( PGEW1S03 TO-52 plastic 5 7 PGEW1S09 TO-52 plastic 15 25 PGEW2S09 TO-52 ...

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... Small footprint • Custom packaging available Typical Applications Real-time breath-to-breath quantita- tive end-tidal CO 2 Datasheets available upon request 46 www.optoelectronics.perkinelmer.com Digital Sidestream CO The PerkinElmer Digital Sidestream CO breakthrough in solid-state technology. These sensors achieve the highest levels of accuracy and reliability while having no moving parts ...

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CO Sidestream Sensors 2 Mainstream CO Sensors 2 Technical Specification Digital Sidestream CO Bench 2 Method Non-dispersive Infrared Absorption Calibration 3-point calibration 150 bpm Respiration Rate 5 V Input Voltage Power Consumption 1.0 W typical, 1.5 W max Output Digital ...

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Corporate Headquarters: PerkinElmer Optoelectronics, 44370 Christy Street, Fremont, CA 94538-3180 P: (510) 979-6500, (800) 775-6786, F: (510) 687-1140 www.optoelectronics.perkinelmer.com . ...

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