RL1024P Perkin Elmer Optoelectronics, RL1024P Datasheet - Page 15

• Manufacturer Part Number: RL1024P
• Manufacturer: Perkin Elmer Optoelectronics

Silicon PINs—UV Enhanced
Test conditions: T = 22ºC
Test conditions: T = 22˚C
Test conditions: T = 22ºC
C30659-1550-R2A
Si PIN Modules—High Bandwidth–40 MHz to 100 MHz
Technical Specification
Si PINs—UV Enhanced, Low Noise–220 nm to 1100 nm
Technical Specification
Si PIN Modules—Low Bandwidth–1 kHz to 50 kHz
Technical Specification
HUV-1100BG
HUV-2000B
UV-140BQ-2
UV-140BQ-4
Number
UV-040BQ
UV-100BQ
UV-215BQ
UV-245BQ
C30608E
C30950E
C30919E
Part
Number
Number
Part
Part
Standard
Custom
Package
TO-5
C30971
C30662
C30817
C30817 Custom
or APD Standard
Used
Standard
Package
PIN
TO-8
TO-8
TO-8
TO-8
TO-5
TO-5
Sens. Diam.
Package
TO-5
TO-8
TO-8
Photo
2.5x1.3 (x2)
1.3x1.3 (x4)
5.4
2.5
mm
Sens. Diam.
4.4x4.7
Photo
2.5
5.4
mm
1
Photo Sens.
Diam.
mm
0.5
0.2 340 (@ 1550 nm)
0.8
0.8
@250 nm @900 nm
24
24
@250 nm @900 nm
32 (@ 830 nm)
0.12
0.12
0.12
0.12
0.12
0.12
MV/W
Resp.
@900 nm
www.optoelectronics.perkinelmer.com
Resp.
1000
kV/W
560
Resp.
116
116
A/W
0.58
0.58
0.58
0.58
0.58
0.58
Swing (V) Vn (nV/ Hz)
Volt. Out
Spect. Noise
Vn (µV/ Hz)
Volt. Dens.
0.7
0.7
0.7
Lin.
2
2.5
20
Rd MW
Shunt
Resis.
2000
1000
1000
1000
250
375
Photodiodes
Spect. Noise
Volt. Dens.
60
35 0.103 (@ 1550 nm) 50
20
25
Table of Contents
pW/ Hz
Spect. Noise
900 nm
Curr. Dens.:
In (fW/ Hz)
NEP @
0.02
0.17
1.8 (@ 830 nm) 50
3
4
8
7
4
4
@900 nm MHz (3 dB,
pW/ Hz
.036
.025
NEP
Bandwidth
into 50 W
@100 kHz:
kHz
20
Cd (pF)
2
Bandwidth Photo. Diod.
into 50 W)
Cap.
120
450
375
25
68
34
50
40
for These
Bias Volt
Specs V
900 nm
NEP @
fA/ Hz
275-425
275-425
25
20
40-90
Volt V
5
7
7
7
0
0
Bias
12
13