GP1600FSM12 Dynex Semiconductor, GP1600FSM12 Datasheet - Page 6

• Manufacturer Part Number: GP1600FSM12
• Description: Single Switch Igbt Module Advance Information
• Manufacturer: Dynex Semiconductor

GP1600FSM12
6/10
120
100
Fig.11 Typical diode turn-off energy vs collector current
600
500
400
300
200
100
80
60
40
20
0
Fig.9 Typical turn-off energy vs collector current
0
0
0
Conditions:
V
V
R
Conditions:
T
V
V
CE
GE
g
case
CE
GE
= 3.3
200
= 600V,
= 15V,
200
= 600V,
= 15V
= 25˚C,
400
400
Collector current, I
Collector current, I
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
600
600
800
800
T
case
1000
= 125˚C
1000
C
C
- (A)
T
- (A)
case
1200
1200
= 25˚C
A : R
B : R
C : R
1400
A
C
B
1400
g
g
g
= 3.3
= 4.7
= 7
1600
1600
2500
2000
1500
1000
600
500
400
300
200
100
500
0
Fig.10 Typical turn-off energy vs collector current
0
0
0
Conditions:
T
V
V
case
CE
GE
200
t
t
= 600V,
= 15V
200
d(off)
d(on)
t
t
= 125˚C,
f
r
Fig.12 Typical switching times
400
400
Collector current, I
Collector current, I
600
600
800
800
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1000
1000
C
C
- (A)
- (A)
1200
1200 1400 1600
Conditions:
T
V
V
R
A : R
B : R
C : R
case
CE
GE
g
= 3.3
= 600V
= 15V
A
C
B
= 125˚C,
g
g
g
1400
= 7
= 4.7
= 3.3
1600