GP1600FSM12 Dynex Semiconductor, GP1600FSM12 Datasheet - Page 2

• Manufacturer Part Number: GP1600FSM12
• Description: Single Switch Igbt Module Advance Information
• Manufacturer: Dynex Semiconductor

GP1600FSM12
ABSOLUTE MAXIMUM RATINGS
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
THERMAL AND MECHANICAL RATINGS
case
Symbol
Symbol
2/10
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
R
R
R
V
V
P
= 25˚C unless stated otherwise
T
V
I
th(c-h)
th(j-c)
T
I
CM
th(j-c)
GES
CES
max
-
stg
C
isol
j
Thermal resistance - Case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
Thermal resistance - transistor
Thermal resistance - diode
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum power dissipation
Isolation voltage
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Parameter
Parameter
V
DC, T
1ms, T
T
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
case
GE
= 0V
= 25˚C (Transistor)
case
case
= 82˚C
Transistor
Mounting - M6
DC junction to case
Mounting torque 5Nm
(with mounting grease)
Diode
Electrical connections - M4
Electrical connections - M8
= 112˚C
DC junction to case
Test Conditions
Conditions
-
-
-
www.dynexsemi.com
Min.
–40
-
-
-
-
-
-
-
-
Max.
1600
3200
1200
2500
13.9
20
Max.
125
150
125
20
10
9
8
5
2
Units
o
o
o
kW
Units
C/kW
C/kW
C/kW
V
A
A
V
V
Nm
Nm
Nm
o
o
o
C
C
C