P10NB20FP STMicroelectronics, P10NB20FP Datasheet - Page 3

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P10NB20FP

Manufacturer Part Number
P10NB20FP
Description
Search -----> STP10NB20FP
Manufacturer
STMicroelectronics
Datasheet
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Symb ol
Symb ol
Symb ol
V
I
t
SDM
t
I
r(Vof f)
SD
Q
d(on)
Q
I
Q
RRM
Q
SD
t
t
t
t
rr
r
gs
gd
f
c
rr
g
( )
( )
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
(see test circuit, figure 3)
V
V
R
(see test circuit, figure 5)
I
I
V
(see test circuit, figure 5)
SD
SD
DD
DD
DD
DD
G
G
= 4.7
= 4.7
=10 A
=10 A
= 100 V
= 160 V
= 160 V I
= 50 V
Test Cond ition s
Test Cond ition s
Test Cond ition s
di/dt = 100 A/ s
V
V
GS
GS
T
I
I
D
V
D
D
j
= 0
= 10 A V
GS
= 150
= 5 A
= 10 A
= 10 V
Safe Operating Area for TO-220FP
= 10 V
o
C
GS
= 10 V
Min.
Min.
Min.
Typ .
Typ .
Typ .
11.5
170
980
7.5
5.5
10
15
17
10
20
8
STP10NB20/FP
Max.
Max.
Max.
1.5
14
20
24
11
14
28
10
40
Un it
Un it
Un it
nC
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
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