P10NB20FP STMicroelectronics, P10NB20FP Datasheet

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P10NB20FP

Manufacturer Part Number
P10NB20FP
Description
Search -----> STP10NB20FP
Manufacturer
STMicroelectronics
Datasheet
www.DataSheet4U.com
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process,
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
November 1997
STP10NB20
STP10NB20F P
Symbol
dv/dt(
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
I
V
DM
V
V
V
T
P
DGR
I
I
T
ISO
DS
GS
stg
D
D
t ot
TYPE
( )
j
1
)
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Insulation W ithstand Voltage (DC)
Storage T emperature
Max. O perating Junction T emperature
SGS-Thomson
DS(on)
200 V
200 V
V
= 0.3
DSS
< 0.40
< 0.40
has
R
DS(on)
c
Parameter
GS
= 25
GS
N - CHANNEL ENHANCEMENT MODE
designed
= 20 k )
= 0)
o
C
c
c
10 A
6 A
= 25
= 100
I
D
an
o
C
o
C
(
1
) I
SD
PowerMESH
INTERNAL SCHEMATIC DIAGRAM
10A, di/dt
TO-220
ST P10NB20
300 A/ s, V
0.68
5.5
10
40
85
6
1
STP10NB20FP
2
-65 to 150
3
Value
2000
200
200
150
DD
STP10NB20
30
STP10NB20FP
V
(BR)DSS
TO-220FP
0.24
5.5
40
30
, Tj
6
4
MOSFET
T
JMAX
1
W/
V/ns
Unit
o
o
2
W
V
V
V
A
A
A
V
C
C
o
3
C
1/9

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P10NB20FP Summary of contents

Page 1

... Parameter = 100 10A, di/ STP10NB20 STP10NB20FP MOSFET TO-220 TO-220FP Value Unit ST P10NB20 STP10NB20FP 200 V 200 0.68 0.24 W/ 5.5 5.5 V/ns 2000 V o -65 to 150 C o 150 C 300 ...

Page 2

STP10NB20/FP THERMAL DATA R Thermal Resistance Junction-case t hj- Thermal Resistance Junction-ambient t hj- amb R Thermal Resistance Case-sink thc Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symb ol I Avalanche Current, Repetitive ...

Page 3

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol Parameter t Turn-on Time d(on) t Rise Time r Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain Charge gd SWITCHING OFF Symb ol Parameter t Off-voltage Rise Time r(Vof f) ...

Page 4

STP10NB20/FP Thermal Impedance for TO-220 Output Characteristics www.DataSheet4U.com Transconductance 4/9 Thermal Impedance forTO-220FP Transfer Characteristics Static Drain-source On Resistance ...

Page 5

Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature www.DataSheet4U.com Source-drain Diode Forward Characteristics STP10NB20/FP Capacitance Variations Normalized On Resistance vs Temperature 5/9 ...

Page 6

STP10NB20/FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load www.DataSheet4U.com Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge ...

Page 7

DIM. MIN. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 www.DataSheet4U.com TO-220 MECHANICAL DATA ...

Page 8

STP10NB20/FP DIM. MIN. A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 www.DataSheet4U.com ¯ 8/9 TO-220FP MECHANICAL DATA ...

Page 9

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsabilit y for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results ...

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