P10C68 GEC Plessey Semiconductors, P10C68 Datasheet

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P10C68

Manufacturer Part Number
P10C68
Description
CMOS / SNOS NVSRAM
Manufacturer
GEC Plessey Semiconductors
Datasheet
www.DataSheet4U.com
ns) with a non-volatile electically-erasable PROM (EEPROM)
cell incorporating in each static memory cell. The SRAM can
be read and written an unlimited number of times while
independent non-volatile data resides in PROM.
SRAM to the EEPROM (STORE) and from the EEPROM back
to the SRAM ( RECALL) using the NE (bar) pin. The Store and
Recall cycles are initiated through software sequences on the
P11C68. These devices combine the high performance and
ease of use of a fast SRAM with the data integrity of non-
volatility.
pinout for non-volatile RAMs in a 28-pin 0.3-inch plastic and
ceramic dual-in-line packages.
FEATURES
I Non-Volatile Data Integrity
I 10 year Data Retention in EEPROM
I 35ns and 45ns Address and Chip Enable Access Times
I 20ns and 25ns Output Enable Access
I Unlimited Read and Write to SRAM
I Unlimited Recall Cycles from EEPROM
I 10
I Automatic Recall on Power up
I Automatic Store Timing
I Hardware Store Protection
I Single 5V ± 10% Operation
I Available in Standard Package 28-pin 0.3-inch DIL
I Commercial and Industrial temperature ranges
ORDERING INFORMATION
(See back page)
plastic and ceramic
The P10C68 and P11C68 are fast static RAMs (35 and 45
On the P10C68 data may easily be transferred from the
The P10C68 and P11C68 feature the industry standard
4
Store Cycles to EEPROM
HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM
P10C68/P11C68
CMOS/SNOS NVSRAM
Pin 1 NE
Pin 1 N/C
Pin Name
A
W
DQ
E
G
V
V
0
CC
SS
- A
0
DQ
DQ
DQ
NE
)
- DQ
A
A
A
A
A
A
A
A
A
V
12
12
7
6
5
4
3
2
1
0
0
1
2
ss
PRELIMINARY INFORMATION
7
10
11
12
13
14
1
2
3
4
5
6
7
8
9
Function
Address inputs
Write enable
Data in/out
Chip enable
Output enable
Power (+5V)
Ground
Non volatile enable P10C68
No connection
DS3600-1.2 September 1992
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
W
NC
A
A
A
G
A
E
DQ
DQ
DQ
DQ
DQ
CC
8
9
11
10
7
6
5
4
3
P11C68
1

Related parts for P10C68

P10C68 Summary of contents

Page 1

... HIGH PERFORMANCE NON-VOLATILE STATIC RAM The P10C68 and P11C68 are fast static RAMs (35 and 45 ns) with a non-volatile electically-erasable PROM (EEPROM) cell incorporating in each static memory cell. The SRAM can be read and written an unlimited number of times while independent non-volatile data resides in PROM. ...

Page 2

... EEPROM ARRAY 256 x 256 R O STORE D STATIC RAM E ARRAY C 256 x 256 RECALL COLUMN I/O COLUMN DECODER STORE/ RECALL CONTROL G NE (P10C68 only ...

Page 3

... Value Symbol Min. Max CC1 CC2 I 23 SB1 SB2 ±1 I ILK ±5 I OLK V 2 0.4 OL P10C68/P11C68 Units Conditions Max +0.5 V All inputs CC V All inputs 0 +85 C Units Conditions 35ns AVAV 45ns AVAV ≤ 0.2V mA ...

Page 4

... P10C68/P11C68 www.DataSheet4U.com Industrial temperature range Test conditions (unless otherwise stated): Tamb = -40˚C to 70˚C, Vcc = +5V ± 10% (See notes 4, 5 and 6) Characteristic Average power supply current Average power supply current during STORE cycle Average power supply current (standby, cycling TTL input levels) ...

Page 5

... Parameter guaranteed but not tested. ADDRESS DQ (DATA OUT) W P10C68-35 Parameter P11C68-35 Min. Max AVAV t AVQV t AXQX t WHQV P10C68/P11C68 P10C68-45 P11C68-45 Units Notes Min. Max ...

Page 6

... If W (bar) is low when E (bar) goes low, the outputs remain in the high impedance state AVAV t ELQV t ELQX t GLQV t GLQX t ELICCH t WHQV F P10C68-35 Parameter P11C68-35 Min EHICCL t EHQZ t GHQZ DATA VALID P10C68-45 P11C68-45 Units Max. Max. Min Notes 11, 14 ...

Page 7

... AVAV t t AVEL ELEH t AVEH t WLEH HIGH IMPEDANCE P10C68/P11C68 t WHAX t t DVWH WHDX DATA VALID t WHQX P10C68-45 P11C68-45 Units Max. Min. Max EHAX t t DVEH EHDX DATA VALID Notes ...

Page 8

... P10C68/P11C68 www.DataSheet4U.com V CC 5.0V 3.3V AUTO RECALL STORE INHIBIT NON-VOLATILE MEMORY OPERATION OF P10C68 MODE SELECTION NOTE 15. An automatic RECALL also takes place on chip power-up, starting when Vcc exceeds 3.3V, and taking t time at which Vcc exceeds 3.3V. Vcc must not drop below 3.3V once it has exceeded it for the RECALL to function properly ...

Page 9

... (DATA OUT (DATA OUT) Parameter GHNL NLWL t ELWL HIGH IMPEDANCE t NLEL t GHEL t WLEL t HIGH IMPEDANCE P10C68/P11C68 P10C68-45 P10C68-35 Min. Max. Max. Min WLNH t WLQX ELNH t ELQX1 Units Notes ...

Page 10

... RECALL t Recall initiation cycle time t ELNH (bar) set-up NLEL t Output enable set-up GLEL t Write enable set-up WHEL P10C68 RECALL CYCLE (BAR) CONTROLLED (See note 16) Symbol Standard Alternative t Recall cycle time t GLQX2 RECALL t Recall initiation cycle time t GLNH (bar) set-up ...

Page 11

... (DATA OUT HIGH IMPEDANCE (DATA OUT (DATA OUT) t NLHN t GLNL t WHNL t ELNL t NLQZ HIGH IMPEDANCE t NLEL t GLEL t t WHEL ELNH t ELQX2 t NLGL t GLNH t WHGL t ELGL HIGH IMPEDANCE P10C68/P11C68 t NLQX t GLQX2 11 ...

Page 12

... P10C68/P11C68 www.DataSheet4U.com NON-VOLATILE MEMORY OPERATION OF P11C68 MODE SELECTION (hex 0000 1555 0AAA 1FFF 10F0 0F0F L H 0000 1555 0AAA 1FFF 10F0 0F0E NOTES 21. The six consecutive addresses must be in order listed - (0000, 1555, 0AAA, 1FFF, 10F0, 0F0F) for a STORE cycle or (0000, 1555, 0AAA, 1FFF, 10F0, 0F0E) for a RECALL cycle ...

Page 13

... OUT) OPERATING NOTES Note: References to NE (bar) should be taken as applying to P10C68 only and can be ignored for P11C68. The devices have two separate modes of operation: SRAM mode and non-volatile mode. In SRAM mode, the memory operates as an ordinary static RAM. While in non-volatile mode, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM ...

Page 14

... If E (bar) and G (bar) are LOW and W (bar) and NE (bar) are HIGH at the end of the cycle, a READ will be performed and the outputs will go active, signalling the end of the STORE. The P10C68 will not be activated into either a STORE or RECALL cycle by the software sequence required for the P11C68. ...

Page 15

... Customer Service Centre. PIN 1 1.27 (0.050) TYP 35.20/35.92 (1.386/1.414) 1.016/1.524 (0.040/0.060) 2.54 (0.100) 3.30/4.06 (0.130/0.160) Pin 1 Ref. notch 0.288 (7.32) 0.2 (5.08) max SEATING PLANE 0.2/0.3 0.12 (3.05) min Nominal Centres 0.3 (7.62) P10C68/P11C68 7.620/8.128 (0.300/0.320) 0.229/0.308 (0.009/0.012) 7.37/7.87 (0.290/0.310) 15 ...

Page 16

... P10C68/P11C68 www.DataSheet4U.com ORDERING INFORMATION PxxC68 - DxBS Device number eg hardware store/recall 11 = software store/recall HEADQUARTERS OPERATIONS GEC PLESSEY SEMICONDUCTORS Cheney Manor, Swindon, Wiltshire SN2 2QW, United Kingdom. Tel: (0793) 518000 Tx: 449637 Fax: (0793) 518411 GEC PLESSEY SEMICONDUCTORS Sequoia Research Park, 1500 Green Hills Road, Scotts Valley, California 95066, United States of America ...

Page 17

North America Tel: +1 (770) 486 0194 Fax: +1 (770) 631 8213 Information relating to products and services furnished herein by Mitel Corporation or its subsidiaries (collectively “Mitel”) is believed to be reliable. However, Mitel assumes no liability for ...

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