APTGF90H60T3G Microsemi Corporation, APTGF90H60T3G Datasheet - Page 7

• Manufacturer Part Number: APTGF90H60T3G
• Description: Full - Bridge Npt Igbt Power Module
• Manufacturer: Microsemi Corporation

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Typical diode Performance Curve
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
240
200
160
120
400
300
200
100
0.7
0.6
0.5
0.4
0.3
0.2
0.1
80
40
0.00001
0
3
2
1
0
0
0
0.0
0
1
Capacitance vs. Reverse Voltage
Forward Current vs Forward Voltage
T
V
J
V
R
=125°C
=400V
400
F
Q
0.5
0.9
0.3
0.7
0.5
0.1
0.05
, Anode to Cathode Voltage (V)
RR
V
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
vs. Current Rate Charge
R
, Reverse Voltage (V)
800
1.0
10
-diF/dt (A/µs)
0.0001
1200 1600 2000 2400
T
J
1.5
=125°C
T
100
2.0
J
=25°C
0.001
Rectangular Pulse Duration (Seconds)
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2.5
60 A
120 A
30 A
1000
3.0
Single Pulse
0.01
Max. Average Forward Current vs. Case Temp.
175
150
125
100
50
40
30
20
10
100
75
50
0
80
60
40
20
0
0
0
25
T
V
0.1
I
J
R
RRM
=125°C
=400V
Trr vs. Current Rate of Charge
400
APTGF90H60T3G
400
50
vs. Current Rate of Charge
Case Temperature (°C)
800
800
-di
75
-diF/dt (A/µs)
F
/dt (A/µs)
1200 1600 2000 2400
1200 1600 2000 2400
100
1
120 A
Duty Cycle = 0.5
125
30 A
T
J
T
V
=175°C
J
R
=125°C
=400V
120 A
150
60 A
60 A
30 A
10
175
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