APTGF90H60T3G Microsemi Corporation, APTGF90H60T3G Datasheet

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APTGF90H60T3G

Manufacturer Part Number
APTGF90H60T3G
Description
Full - Bridge Npt Igbt Power Module
Manufacturer
Microsemi Corporation
Datasheet
Absolute maximum ratings
RBSOA
Symbol
V
V
NPT IGBT Power Module
I
All multiple inputs and outputs must be shorted together
P
I
CM
CES
C
GE
D
18
19
26
27
29
30
31
32
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
28 27 26
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Example: 13/14 ; 29/30 ; 22/23 …
Full - Bridge
2
15
Q1
Q2
29
3
25
4
CR2
30
CR1
Parameter
13 14
22
23
23 22
CR4
7
7
8
CR3
31
8
R1
20
Q3
Q4
32
10
19
18
11 12
16
16
15
14
13
www.microsemi.com
11
10
4
3
T
T
T
T
T
C
C
C
C
j
= 125°C
= 25°C
= 80°C
= 25°C
= 25°C
Application
Features
Benefits
200A@500V
Max ratings
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Non Punch Through (NPT) Fast IGBT
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
Low profile
Easy paralleling due to positive T
Each leg can be easily paralleled to achieve a
phase leg of twice the current capability
RoHS compliant
600
120
315
±20
416
90
APTGF90H60T3G
V
I
-
-
-
-
-
-
-
-
C
CES
Low tail current
Switching frequency up to 100 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
RBSOA and SCSOA rated
Low voltage drop
Symmetrical design
= 90A @ Tc = 80°C
= 600V
Unit
W
V
A
V
C
of V
CEsat
1 - 7

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APTGF90H60T3G Summary of contents

Page 1

... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF90H60T3G Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies Q3 • ...

Page 2

... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF90H60T3G = 25°C unless otherwise specified j Test Conditions T = 25° 600V T = 125° 25°C ...

Page 3

... R : Thermistor value ⎜ ⎜ ⎟ ⎟ − ⎥ ⎝ ⎠ ⎦ 25 IGBT Diode To heatsink 17 12 www.microsemi.com APTGF90H60T3G Min Typ Max Unit 50 kΩ 3952 Min Typ Max Unit 0.3 °C/W 0.65 2500 V -40 150 °C -40 125 ...

Page 4

... Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.10 1.00 0.90 0. Junction Temperature (°C) J APTGF90H60T3G =15V) Output Characteristics (V GE 200 250µs Pulse Test < 0.5% Duty cycle 150 T =125°C J 100 100A 25° ...

Page 5

... 125°C Eon, 100A Eoff, 100A 2 1 Eon, 100A Gate Resistance (Ohms) www.microsemi.com APTGF90H60T3G Turn-Off Delay Time vs Collector Current 175 150 125 100 400V 1.2Ω 100 150 I , Collector to Emitter Current (A) CE ...

Page 6

... Collector to Emitter Voltage (V) CE Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 0.05 0 0.00001 0.0001 0.001 Rectangular Pulse Duration (Seconds) www.microsemi.com APTGF90H60T3G Operating Frequency vs Collector Current 240 200 ZVS 160 ZCS 120 80 hard 40 switching Collector Current (A) C Single Pulse 0.01 ...

Page 7

... 1200 1600 2000 2400 0 400 Max. Average Forward Current vs. Case Temp. 100 100 1000 25 www.microsemi.com APTGF90H60T3G =125° =400V R 120 400 800 1200 1600 2000 2400 -di /dt (A/µs) F vs. Current Rate of Charge ...

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