APTGF90H60T3G Microsemi Corporation, APTGF90H60T3G Datasheet - Page 4

• Manufacturer Part Number: APTGF90H60T3G
• Description: Full - Bridge Npt Igbt Power Module
• Manufacturer: Microsemi Corporation

Typical IGBT Performance Curve
200
150
100
200
150
100
50
50
0
0
1.20
1.10
1.00
0.90
0.80
0
0
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
V
25
CE
1
Output characteristics (V
Breakdown Voltage vs Junction Temp.
, Collector to Emitter Voltage (V)
V
GE
T
2
J
, Gate to Emitter Voltage (V)
, Junction Temperature (°C)
Transfer Characteristics
1
50
3
T
J
=25°C
T
J
4
=125°C
2
75
5
6
GE
T
T
=15V)
3
100
J
J
=125°C
=25°C
7
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8
125
4
9
200
150
100
140
120
100
18
16
14
12
10
50
80
60
40
20
8
6
4
2
0
0
0
0
25
DC Collector Current vs Case Temperature
0
250µs Pulse Test
< 0.5% Duty cycle
APTGF90H60T3G
I
T
V
C
J
50
Output Characteristics (V
CE
= 100A
= 25°C
, Collector to Emitter Voltage (V)
50
T
100 150 200 250 300 350 400
C
, Case Temperature (°C)
1
Gate Charge (nC)
V
Gate Charge
CE
75
=300V
V
T
2
J
CE
=25°C
=120V
100
GE
T
J
=125°C
=10V)
3
125
V
CE
=480V
150
4
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