APT8075BVFR05 Advanced Crystal Technology, APT8075BVFR05 Datasheet - Page 4

• Manufacturer Part Number: APT8075BVFR05
• Description: Power Generation High Voltage N-channel Enhancement Mode Power Mosfets.
• Manufacturer: Advanced Crystal Technology

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
50
10
20
16
12
.5
.1
FIGURE 10, MAXIMUM SAFE OPERATING AREA
5
1
8
4
0
V
1
0
DS
I
T C =+25°C
T J =+150°C
SINGLE PULSE
D
LIMITED BY R DS (ON)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= I
OPERATION HERE
D
Q
[Cont.]
50
g
, TOTAL GATE CHARGE (nC)
5
10
100
V DS =250V
V DS =100V
50 100
150
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
V DS =400V
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
200
Dimensions in Millimeters and (Inches)
250
800
TO-247 Package Outline
10µS
100µS
1mS
10mS
100mS
DC
20.80 (.819)
21.46 (.845)
19.81 (.780)
20.32 (.800)
6.15 (.242) BSC
4.50 (.177) Max.
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
1.01 (.040)
1.40 (.055)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
5.45 (.215) BSC
10,000
5,000
1,000
2-Plcs.
500
100
50
10
.5
.1
5
1
.01
0.2
V
V
DS
SD
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
15.49 (.610)
16.26 (.640)
T J =+150°C
0.4
.1
0.6
0.8
APT8075BVFR
1
5.38 (.212)
6.20 (.244)
T J =+25°C
1.0
1.65 (.065)
2.13 (.084)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
Gate
Drain
Source
C iss
C oss
C rss
10
1.2
1.4
50