APT10M11LV Advanced Crystal Technology, APT10M11LV Datasheet
APT10M11LV
Manufacturer Part Number
APT10M11LV
Description
Power Generation High Voltage N-channel Enhancement Mode Power Mosfets
Manufacturer
Advanced Crystal Technology
Datasheet
1.APT10M11LV.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT10M11LVR
Manufacturer:
APT
Quantity:
15 500
Power MOS V
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout..
• Faster Switching
• Lower Leakage
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
Symbol
Symbol
T
R
BV
V
V
V
J
I
I
I
V
E
DS(on)
E
D(on)
GS(th)
I
,T
I
GSS
P
DSS
GSM
T
DSS
I
DM
AR
GS
AR
D
AS
DSS
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of high voltage N-Channel enhancement
POWER MOS V
1
1
5
2
5
(Repetitive and Non-Repetitive)
5
DS
C
APT Website - http://www.advancedpower.com
(V
1
= V
C
= 25 C
• 100% Avalanche Tested
• Popular TO-264 Package
DS
= 25 C
4
GS
GS
> I
2
DS
DS
, I
GS
= 30V, V
Bend, Oregon 97702 -1035
F-33700 Merignac - France
D(on)
D
(V
= V
= 0.8 V
= 0V, I
= 2.5mA)
5
GS
DSS
x R
= 10V, 0.5 I
, V
DS(on)
DSS
D
DS
= 250 A)
GS
= 0V)
®
, V
= 0V)
Max, V
GS
D[Cont.]
= 0V, T
All Ratings: T
GS
)
= 10V)
C
= 125 C)
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
100V 100A 0.011
APT10M11LVR
C
®
= 25 C unless otherwise specified.
MIN
100
100
2
APT10M1LVR
-55 to 150
2500
4.16
TYP
100
100
400
520
300
100
G
50
30
40
TO-264
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
0.011
1000
MAX
250
100
4
D
S
Amps
Watts
Amps
Amps
Ohms
UNIT
W/ C
UNIT
Volts
Volts
Volts
Volts
mJ
nA
C
A
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APT10M11LV Summary of contents
Page 1
... 0V DSS GS = 30V 0V 2.5mA APT Website - http://www.advancedpower.com Bend, Oregon 97702 -1035 F-33700 Merignac - France APT10M11LVR 100V 100A 0.011 TO-264 ® unless otherwise specified. C APT10M1LVR 100 100 400 30 40 520 4.16 -55 to 150 300 100 ...
Page 2
... S D[Cont Starting 500 The maximum current is limited by lead temperature RECTANGULAR PULSE DURATION (SECONDS) APT10M11LVR MIN TYP MAX 8600 10300 3200 4480 1180 1770 300 450 95 145 DSS @ 25 C 110 165 ...
Page 3
... APT10M11LVR 200 V GS =7V, 10V & 15V 160 120 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 200 - +25 C 160 +125 > (ON (ON)MAX. 120 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE ...
Page 4
... BSC 2-Plcs. Dimensions in Millimeters and (Inches) 5,045,903 5,089,434 5,182,234 5,256,583 4,748,103 5,283,202 5,231,474 APT10M11LVR C oss C iss C iss C oss C rss . DRAIN-TO-SOURCE VOLTAGE (VOLTS =+150 =+ 0.4 0.8 1.2 1.6 2.0 ...