APT8024LVR Advanced Crystal Technology, APT8024LVR Datasheet
APT8024LVR
Manufacturer Part Number
APT8024LVR
Description
Power Generation High Voltage N-channel Enhancement Mode Power Mosfets.
Manufacturer
Advanced Crystal Technology
Datasheet
1.APT8024LVR.pdf
(4 pages)
Available stocks
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Part Number
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Quantity
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Company:
Part Number:
APT8024LVR
Manufacturer:
APT
Quantity:
15 500
Power MOS V
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
• TO-264
• Faster Switching
• Lower Leakage
STATIC ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Symbol
Symbol
T
R
V
BV
V
V
J
I
V
I
E
E
DS(on)
GS(th)
I
,T
GSS
I
DSS
GSM
P
DM
T
DSS
AR
I
GS
AR
D
AS
DSS
D
STG
L
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MAX
POWER MOS V
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
Package
is a new generation of high voltage N-Channel enhancement
1
1
(Repetitive and Non-Repetitive)
DS
C
APT Website - http://www.advancedpower.com
= V
C
= 25°C
1
• Avalanche Energy Rated
= 25°C
4
GS
GS
2
DS
DS
, I
= ±30V, V
GS
D
(V
®
= 800V, V
= 640V, V
= 2.5mA)
= 0V, I
GS
= 10V, I
MOSFET
DS
D
= 250µA)
GS
GS
= 0V)
= 0V, T
= 0V)
D
= 16.5A)
All Ratings: T
C
= 125°C)
800V 33A
C
®
= 25°C unless otherwise specified.
APT8024LVR
APT8024B2VFR_LVFR
MIN
800
B2VR
2
T-MAX™
-55 to 150
3000
5.00
TYP
±30
±40
800
132
625
300
33
33
50
0.240
±100
MAX
250
25
TO-264
4
0.240
G
LVR
Amps
Amps
Ohms
Watts
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
°C
µA
nA
Ω Ω Ω Ω Ω
D
S
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APT8024LVR Summary of contents
Page 1
... 640V 0V 125° ±30V 0V 2.5mA APT Website - http://www.advancedpower.com APT8024LVR 800V 33A 0.240 B2VR T-MAX™ TO-264 ® LVR G = 25°C unless otherwise specified. C APT8024B2VFR_LVFR UNIT 800 Volts 33 Amps 132 ±30 Volts ±40 ...
Page 2
DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
Page 3
RC MODEL Junction temp. (°C) 0.0302 Power 0.0729 (watts) 0.0955 Case temperature. (°C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 100 V DS > (ON (ON)MAX. 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 80 ...
Page 4
OPERATION HERE LIMITED (ON =+25° =+150°C SINGLE PULSE 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 33A D ...