APT6030SVR Advanced Crystal Technology, APT6030SVR Datasheet - Page 3

• Manufacturer Part Number: APT6030SVR
• Description: Power Generation High Voltage N-channel Enhancement Mode Power Mosfets.
• Manufacturer: Advanced Crystal Technology

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
2.0
1.5
1.0
0.5
0.0
40
32
24
16
40
32
24
16
25
20
15
10
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
8
0
8
0
5
0
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
-50
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
25
0
0
V
V DS > I D (ON) x R DS (ON)MAX.
V
I
DS
D
GS
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
= 0.5 I
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
-25
, GATE-TO-SOURCE VOLTAGE (VOLTS)
GS
T
V GS =5.5V, 6V, 10V & 15V
T J = +125°C
50
J
T J = +25°C
T
, JUNCTION TEMPERATURE (°C)
50
= 10V
C
D
, CASE TEMPERATURE (°C)
[Cont.]
2
0
100
25
75
150
50
4
100
75
T J = -55°C
200
100 125 150
6
4.5V
5V
4V
125
250
150
300
8
1.15
1.10
1.05
1.00
0.95
0.90
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.5
1.4
1.3
1.2
1.1
1.0
0.9
1.2
1.1
1.0
0.9
0.8
0.7
0.6
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
40
32
24
16
8
0
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
-50
-50
0
0
V
DS
V
FIGURE 5, R
V GS =6V, 10V & 15V
GS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-25
-25
T
= 10V @ 0.5 I
I
NORMALIZED TO
J
D
T
, JUNCTION TEMPERATURE (°C)
, DRAIN CURRENT (AMPERES)
4
8
C
, CASE TEMPERATURE (°C)
0
0
V GS =10V
DS
25
25
16
(ON) vs DRAIN CURRENT
8
D
[Cont.]
50
50
12
24
75
75
5.5V
100 125 150
V GS =20V
100 125 150
16
32
4.5V
5V
4V
20
40