APT17N80SC3 Advanced Crystal Technology, APT17N80SC3 Datasheet - Page 2

• Manufacturer Part Number: APT17N80SC3
• Description: Super Junction Mosfet
• Manufacturer: Advanced Crystal Technology

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
APT Reserves the right to change, without notice, the specifications and information contained herein.
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Symbol
Symbol
Symbol
temperature
t
R
R
C
t
C
dv
C
V
Q
Q
Q
d(off)
E
E
d(on)
E
E
I
Q
t
SM
I
θJC
θJA
oss
t
t
SD
rss
S
iss
on
off
on
off
/
gs
gd
rr
r
f
g
rr
dt
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time (I
Reverse Recovery Charge (I
Peak Diode Recovery
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Characteristic
Junction to Case
Junction to Ambient
10
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.5
0.3
0.1
0.05
0.9
0.7
10
3
-4
dv
2
1
/
dt
(V
S
(Body Diode)
6
6
5
= -
GS
S
= -
17A
= 0V, I
RECTANGULAR PULSE DURATION (SECONDS)
17A
, dl
, dl
S
S
/dt = 100A/µs, V
10
= -
S
-3
/dt = 100A/µs, V
SINGLE PULSE
17A
INDUCTIVE SWITCHING @ 125°C
)
INDUCTIVE SWITCHING @ 25°C
4 Starting T
5
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
V
RESISTIVE SWITCHING
V
DD
Test Conditions
DD
I
calculated as P
I
I
S
I
D
D
I
D
D
= 533V, V
V
=
= 533V, V
= 17A, R
= 17A, R
= 17A @ 125°C
V
V
= 17A @ 25°C
GS
R
V
V
R
-
V
f = 1 MHz
DD
DD
17A
DS
GS
G
GS
= 400V)
= 0 to10V
R
= 4.7Ω
= 400V
= 400V
10
= 25V
= 10V
= 400V)
= 0V
j
-2
G
G
di
= +25°C, L = 115.92mH, R
GS
GS
/
= 5Ω
= 5Ω
dt
= 15V
= 15V
= 100A/µs
AV
=E
AR
*f
Note:
Peak T J = P DM x Z θJC + T C
V
R
MIN
MIN
MIN
Duty Factor D = t 1 / t
10
= 480V
-1
t 1
G
t 2
2255
1045
T
= 25Ω, Peak I
TYP
TYP
245
140
425
170
TYP
550
J
55
90
11
45
25
15
70
15
6
1
= 125
APT17N80BC3_SC3
2
°
C
MAX
MAX
MAX
0.60
1.2
82
40
17
51
9
6
1.0
L
= 3.4A
Amps
UNIT
UNIT
Volts
UNIT
°C/W
V/ns
nC
µC
pF
ns
µ
ns
J