FW912 Micron Semiconductor Products, FW912 Datasheet - Page 40

• Manufacturer Part Number: FW912
• Description: Flash Memory Technology
• Manufacturer: Micron Semiconductor Products

WRITE CYCLE TIMING REQUIREMENTS
ERASE AND PROGRAM TIMING REQUIREMENTS
4 Meg x 16 Async/Page/Burst Flash Memory
MT28F642D18_3.p65 – Rev. 3, Pub. 8/02
PARAMETER
HIGH recovery to WE# going LOW
CE# setup to WE# going LOW
Write pulse width
ADV# pulse width
Data setup to WE# going HIGH
Address setup to WE# going HIGH
ADV# setup to WE# going HIGH
Address setup to ADV# going HIGH
CE# hold from WE# HIGH
Data hold from WE# HIGH
Address hold from WE# HIGH
Address hold to ADV# going HIGH
Write pulse width High
RST# pulse width
WP# setup to WE# going HIGH
V
Write recovery before Read
WP# hold from valid SRD
V
WE# HIGH to data valid
PARAMETER
4 KW parameter block program time
32 KW parameter block program time
Word program time
4 KW parameter block erase time
32 KW parameter block erase time
Program suspend latency
Erase suspend latency
Chip programming time (APA)
PP
PP
setup to WE# going HIGH
hold from valid SRD
ASYNC/PAGE/BURST FLASH MEMORY
40
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SYMBOL
t
t
t
t
t
t
t
t
VPPH
t
WPH
WOS
t
AVH
AVS
t
t
RHH
t
t
t
t
t
RHS
t
t
t
VPS
WB
WP
CH
DH
AH
VP
DS
AS
VS
RS
CS
RP
MIN
TYP
150
100
200
320
0.3
0.5
70
10
70
50
70
10
30
50
40
0
0
0
0
3
0
0
0
8
5
5
-70/-80
-70/-80
4 MEG x 16
t
AA + 50
10,000
6,400
MAX
MAX
800
10
20
20
6
6
©2002, Micron Technology, Inc.
ADVANCE
UNITS
UNITS
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
s
s
s