IS61C25616AL Integrated Silicon Solution, Inc., IS61C25616AL Datasheet - Page 6

• Manufacturer Part Number: IS61C25616AL
• Description: 256k X 16 High-speed Cmos Static Ram
• Manufacturer: Integrated Silicon Solution, Inc.

IS61C25616AL
IS64C25616AL
READ CYCLE SWITCHING CHARACTERISTICS
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
AC TEST CONDITIONS
6
AC TEST LOADS
OUTPUT
Symbol
to 3.0V and output loading specified in Figure 1.
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
t
t
t
t
t
t
t
t
t
t
t
t
RC
OHA
DOE
HZOE
LZOE
HZCE
LZCE
HZB
LZB
AA
ACE
BA
5V
(2)
(2)
(2)
(2)
Including
jig and
scope
30 pF
Figure 1
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE Access Time
OE Access Time
OE to High-Z Output
OE to Low-Z Output
CE to High-Z Output
CE to Low-Z Output
LB, UB Access Time
LB, UB to High-Z Output
LB, UB to Low-Z Output
480 Ω
IS61C25616AS
IS64C25616AS
255 Ω
See Figures 1 and 2
OUTPUT
Min. Max.
10
—
—
—
—
3
0
0
0
2
0
0
0V to 3.0V
-10
1.5V
Unit
3 ns
5V
—
10
—
10
—
—
—
5
5
5
5
5
Including
jig and
scope
5 pF
Figure 2
480 Ω
(1)
Min.
12
—
—
—
—
3
0
0
0
2
0
0
(Over Operating Range)
-12
Integrated Silicon Solution, Inc. — www.issi.com
Max.
12
12
—
—
—
—
—
6
6
6
6
6
255 Ω
Min. Max.
25
—
—
—
—
3
0
2
0
2
0
0
-25
25
25
15
25
—
—
—
—
—
8
8
8
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
03/21/2008
Rev. C