IS61LV256AL Integrated Silicon Solution, Inc., IS61LV256AL Datasheet

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IS61LV256AL

Manufacturer Part Number
IS61LV256AL
Description
32k X 8 Low Voltage Cmos Static Ram
Manufacturer
Integrated Silicon Solution, Inc.
Datasheet

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IS61LV256AL
FEATURES
• High-speed access times:
• Automatic power-down when chip is deselected
• CMOS low power operation
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh
• Three-state outputs
• Lead-free available
FUNCTIONAL BLOCK DIAGRAM
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
10/23/06
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
32K x 8 LOW VOLTAGE
CMOS STATIC RAM
— 10 ns
— 60 µW (typical) CMOS standby
— 65 mW (typical) operating
required
I/O0-I/O7
A0-A14
GND
VDD
CE
OE
WE
DECODER
CIRCUIT
CONTROL
CIRCUIT
DATA
I/O
DESCRIPTION
The
32,768-word by 8-bit static RAM. It is fabricated using
ISSI
reliable process coupled with innovative circuit design
techniques, yields access times as fast as 8 ns maximum.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation is reduced to
150 µW (typical) with CMOS input levels.
Easy memory expansion is provided by using an active
LOW Chip Enable (CE). The active LOW Write Enable
(WE) controls both writing and reading of the memory.
The IS61LV256AL is available in the JEDEC standard 28-
pin, 300-mil SOJ and the 450-mil TSOP (Type I) packages.
ISSI
's high-performance CMOS technology. This highly
MEMORY ARRAY
IS61LV256AL is a very high-speed, low power,
COLUMN I/O
32K X 8
OCTOBER 2006
ISSI
®
1

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IS61LV256AL Summary of contents

Page 1

... CMOS input levels. Easy memory expansion is provided by using an active LOW Chip Enable (CE). The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS61LV256AL is available in the JEDEC standard 28- pin, 300-mil SOJ and the 450-mil TSOP (Type I) packages. DECODER I/O ...

Page 2

... IS61LV256AL PIN CONFIGURATION 28-Pin SOJ A14 1 28 VDD WE A12 A13 A11 A10 I/O7 I/ I/O6 I/ I/O5 I/ I/O4 GND 14 15 I/O3 PIN DESCRIPTIONS A0-A14 Address Inputs CE Chip Enable Input OE Output Enable Input ...

Page 3

... IS61LV256AL OPERATING RANGE Range Ambient Temperature Commercial 0°C to +70°C Industrial –40°C to +85°C Note operated at 12ns, V range is 3. ELECTRICAL CHARACTERISTICS Symbol Parameter V Output HIGH Voltage OH V Output LOW Voltage OL V Input HIGH Voltage IH (1) V Input LOW Voltage ...

Page 4

... IS61LV256AL POWER SUPPLY CHARACTERISTICS Sym. Parameter Operating CC DD Supply Current Dynamic Operating CC DD Supply Current I TTL Standby Current 1 SB (TTL Inputs) I CMOS Standby 2 SB Current (CMOS Inputs) Notes address and data inputs are cycling at the maximum frequency means no input lines change. ...

Page 5

... IS61LV256AL READ CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Read Cycle Time RC t Address Access Time AA t Output Hold Time OHA CE Access Time t ACE OE Access Time t DOE OE to Low-Z Output t (2) LZOE OE to High-Z Output t (2) HZOE CE to Low-Z Output t (2) LZCE CE to High-Z Output ...

Page 6

... IS61LV256AL AC WAVEFORMS (1,2) READ CYCLE NO. 1 ADDRESS D OUT PREVIOUS DATA VALID (1,3) READ CYCLE NO. 2 ADDRESS LZCE HIGH-Z D OUT Notes HIGH for a Read Cycle. 2. The device is continuously selected. OE Address is valid prior to or coincident with CE LOW transitions OHA ...

Page 7

... IS61LV256AL WRITE CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Write Cycle Time Write End t SCE t Address Setup Time AW to Write End t Address Hold HA from Write End t Address Setup Time SA WE Pulse Width (OE HIGH PWE WE Pulse Width (OE LOW PWE t Data Setup to Write End ...

Page 8

... IS61LV256AL (WE Controlled HIGH During Write Cycle) WRITE CYCLE NO. 2 ADDRESS OE CE LOW DATA UNDEFINED OUT D IN WRITE CYCLE NO. 3 (WE Controlled LOW During Write Cycle) ADDRESS OE LOW CE LOW DATA UNDEFINED OUT D IN Notes: 1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write ...

Page 9

... IS61LV256AL DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter V V for Data Retention Data Retention Current DR t Data Retention Setup Time SDR t Recovery Time RDR Note: 1. Typical Values are measured 3.3V DATA RETENTION WAVEFORM (CE t VDD GND Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev ...

Page 10

... Order Part No. 10 IS61LV256AL-10T IS61LV256AL-10TL IS61LV256AL-10J IS61LV256AL-10JL ORDERING INFORMATION Industrial Range: –40°C to +85°C Speed (ns) Order Part No. 10 IS61LV256AL-10TI IS61LV256AL-10TLI IS61LV256AL-10JI IS61LV256AL-10JLI 10 Package TSOP - Type I TSOP - Type I, Lead-free 300-mil Plastic SOJ 300-mil Plastic SOJ, Lead-free Package TSOP - Type I TSOP - Type I, Lead-free ...

Page 11

... BSC Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — ...

Page 12

... B — 0.010 C — 0.730 D 20.83 — 0.345 E — 0.305 E1 — 0.287 E2 e Integrated Silicon Solution, Inc. — www.issi.com — ISSI MILLIMETERS INCHES Min. Typ. Max. 32 — — 3.56 — — 0.140 0.64 — — 0.025 — 2.41 — 2.67 0.095 — 0.105 0.41 — ...

Page 13

... C 0.10 0.20 D 7.90 8.10 E 11.70 11.90 H 13.20 13.60 e 0.55 BSC L 0.30 0. Integrated Silicon Solution, Inc. PK13197T28 Rev. B 01/31/ SEATING PLANE Inches Min Max Notes Controlling dimension: millimeters, unless otherwise specified. 0.037 0.047 2. BSC = Basic lead spacing between centers. 0.002 0.008 3. Dimensions D and E do not include mold flash protrusions and should be measured from the bottom of the package 0 ...

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