FX6ASJ-3 Renesas Electronics Corporation., FX6ASJ-3 Datasheet - Page 5

• Manufacturer Part Number: FX6ASJ-3
• Description: High-speed Switching Use Nch Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

FX6ASJ-3
Rev.2.00
10
10
10
1.4
1.2
1.0
0.8
0.6
0.4
–1
7
5
3
2
7
5
3
2
1
0
Aug 07, 2006
Switching Time Measurement Circuit
R
V
I
Channel Temperature Tch (°C)
Channel Temperature Tch (°C)
GEN
V
I
Pulse Test
–50
–50
D
Channel Temperature (Typical)
Channel Temperature (Typical)
D
Vin Monitor
GS
GS
= –1mA
= –3A
On-State Resistance vs.
= 0V
= –10V
Breakdown Voltage vs.
R
0
0
GS
page 5 of 6
50
50
D.U.T.
100
100
R
V
L
150
150
DD
Vout
Monitor
10
10
10
10
–1
–2
7
5
3
2
7
5
3
2
7
5
3
2
1
0
10
D = 1.0
0.5
0.2
0.1
–4
t d(on)
2 3 5 7
–4.0
–3.2
–2.4
–1.6
–0.8
Vout
Vin
Transient Thermal Impedance Characteristics
0
10
V
I
Channel Temperature Tch (°C)
0.05
0.02
0.01
Single Pulse
–50
D
Channel Temperature (Typical)
–3
DS
= –1mA
2 3 5 7
10%
= –10V
Threshold Voltage vs.
10%
Switching Waveform
Pulse Width tw (s)
10
90%
0
t r
–2
2 3 5 7
50
10
–1
t d(off)
2 3 5 7
100
10
0
150
P
2 3 5 7
90%
D
tw
DM
=
T
90%
tw
T
10%
t f
10
1
2 3 5 7
10
2